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J-Series Power Modules for Vehicles

J-Series Power Modules for Vehicles

Currently under development, the J-Series IPM1, designed for optimum performance and safety, and the J-Series T-PM2 (shown in photo), which incorporates Mitsubishi Electric's unique DLB3 construction for high reliability, provide optimal motor drive performance for hybrid and electric vehicles.

1
Intelligent Power Module: A power module that features drive and protection functions
2
Transfer Molded Power Module
3
Direct Lead Bonding: Internal connection technology involving soldering the main terminal to the power chip
V1 Series High-output IPMs for motor drive and control equipment

V1 Series High-output IPMs for motor drive and control equipment

Featuring IGBT1 switching elements that incorporate the low-power-loss CSTBT™ 2, V1 Series high-output IPMs reduce power loss compared to conventional inverters, and improve protection against overheating while realizing size reductions and higher capacity for general industrial equipment motor drives and controllers.

1
Insulated Gate Bipolar Transistor: A power switching semiconductor
2
Carrier Stored Trench-Gate Bipolar Transistor: A trademarked Mitsubishi Electric IGBT that incorporates the Company's accumulated carrier expertise
40Gbps DQPSK Quad PD Module

40Gbps DQPSK Quad PD Module

The 40Gbps DQPSK1 Quad PD module is an optical communications module optimized for sending large volumes of data between distant metropolitan areas, and it boasts reductions in size and power consumption while maintaining transmission quality. These features are made possible by integrating all the necessary elements for DQPSK format communications into one package.

1
Differential Quadrature Phase Shift Keying
GaN HEMT High-output Amplifier for C-band Satellite

GaN HEMT High-output Amplifier for C-band Satellite

Mitsubishi Electric has developed a GaN1 HEMT2 high-output amplifier that has achieved the world's highest power-efficiency rating of 67% by incorporating the world's first harmonic tuning circuits3 in GaN HEMT cells. This amplifier is expected to enable smaller, lighter and more energy-efficient transmitters for communication satellites, launches of which are increasing due to renewed demand.

1
Gallium Nitride
2
High Electron Mobility Transistor
3
As of May 26, 2011; based on internal research on the satellite-mounted GaN HEMT high-output amplifier
5.0-inch WVGA Color TFT LCD Modules

5.0-inch WVGA Color TFT LCD Modules

Being the world's first 5.0-inch WVGA Color TFT LCD module1 to realize a luminance of 800cd/m2, 2 this color TFT LCD module ensures good visibility outdoors, features a 170-degree (horizontal/vertical) super-wide viewing angle, and is optimal for small outdoor-use mobile devices.

1
As of April, 2011; based on internal research
2
Standard value, assuming a normal 25°C ambient temperature
9.0-inch QHD Color TFT LCD Module

9.0-inch QHD Color TFT LCD Module

The 9.0-inch QHD color TFT LCD module achieves quarter high definition (QHD) (960 x 540) format, which provides half the resolution of full HD* screens both horizontally and vertically. The module minimizes degradation of full HD resolution and is optimal for monitors in broadcasting stations that use full HD.

* Full-size high-definition resolution: horizontal 1920 x vertical 1080 pixels