SUNNYVALE, Calif. — October 23, 2001 — The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., introduced eight modules and two discrete silicon power transistors for VHF, UHF, and 800-MHz applications. The devices are the first of a new line of MOSFET-based RF transmitters that enable customers to achieve higher performance, lower system design costs, and reduced time-to-market. Mitsubishi Electric’s MOSFET devices offer customers wider broadband coverage per device, higher efficiency, and better stability than traditional bipolar products. They also improve power efficiency for personal mobile radio (PMR) transmitter applications, in which extended talk time is essential.

The new products are the first in Mitsubishi Electric’s strategy to consolidate its current RF line of approximately 350 modules and 75 transistors to approximately 50 modules and 35 transistors covering the 100-MHz to 1-GHz frequency range. Over the next few years, Mitsubishi Electric will consolidate module package types from 16 to 3 and transistor package types from 13 to 3, with each device covering a wider frequency range.

"Using our leading-edge MOSFET technology to consolidate our RF product line results in a win-win situation for both our customers and Mitsubishi Electric because it enables greater bandwidth coverage with fewer products. Our package count consolidation also results in fewer board designs," said Bryon Gutow, senior product marketing manager for microwave and RF products at Mitsubishi Electric & Electronics USA, Inc. "These breakthroughs give customers greater engineering flexibility and substantially reduce their product development time and costs. At the same time, we consolidate and streamline our product offering, thereby reducing our manufacturing costs by improving our efficiency."

The initial products offered in Mitsubishi Electric’s new line include two VHF and six UHF modules available with either 7 watts or 30 watts of output power, as well as 70-watt VHF and 60-watt UHF discrete transistors. The 7-watt VHF module, RA07M1317M, will replace 19 modules; the 7-watt UHF module, RA07M4449M, will replace nine modules; and the VHF discrete transistor, RD70HVF, will replace five transistors from the previous-generation bipolar product line.

Module packaging consists of a plastic case, mounted on a copper heat sink with nickel plating. Discrete transistor packaging consists of a ceramic package mounted on a silver-plated copper heat sink.

Availability

The initial offering of RF modules for VHF and UHF applications is available now in volume production. The first of the 800-MHz RF modules and discrete transistors are expected to be available in 2002.

Product numbers are as follows for the initial offering of MOSFET-based broadband RF modules:

RA07M1317M — VHF — 135-175 MHz — 7.0W Po / 7.2 Vcc

RA07M3540M — UHF — 350-400 MHz — 7.0W Po / 7.2 Vcc

RA07M4045M — UHF — 400-450 MHz — 7.0W Po / 7.2 Vcc

RA07M4449M — UHF — 440-490 MHz — 7.0W Po / 7.2 Vcc

RA07M4752M — UHF — 470-520 MHz — 7.0W Po / 7.2 Vcc

RA30H1317M — VHF — 135-175 MHz — 30.0W Po / 12.5 Vcc

RA30H4047M — UHF — 400-470 MHz — 30.0W Po / 12.5 Vcc

RA30H4452M — UHF — 440-520 MHz — 30.0W Po / 12.5 Vcc

Product numbers are as follows for the initial offering of MOSFET-based discrete silicon RF power transistors:

RD70HVF — VHF — 175 MHz — 70W Po

RD60HUF — UHF — 520 MHz — 60W Po

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About Mitsubishi Electric & Electronics USA, Inc.

Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise and high-power communications applications, including satellite and terrestrial transmitters and receivers, marine and vehicular mobile radios, cellular phones and subscriber units. The company produces gallium arsenide (GaAs) FETs, HBTs, MICs, MMICs and HEMTs; silicon RF power transistors and modules; and surface acoustic wave (SAW) filters for the industrial and consumer markets. Mitsubishi markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.

Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc. are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including DRAM, flash, SRAM, ASIC, ASSP, MCU, microwave/RF, and optoelectronic devices.

Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com.

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Positio Investor & Public Relations
Dave Richardson
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dave@positiopr.com