SUNNYVALE, Calif. — March 12, 2002 — The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., introduced a new 10 gigabit-per-second (Gbps) electro-absorption (EA) modulated distributed feedback (DFB) laser diode capable of DWDM[1] transmissions up to 50 km. The new ML9XX31 laser diode enables designers to use the maximum number of wavelengths available in the C Band, so that several devices can be multiplexed together to achieve data transmission rates potentially as high as 460 Gbps. As a result, the new device is an ideal light source for high-volume Internet and data communications in metropolitan area networks.
Integrating the EA modulator and laser diode on one chip not only saves module space, but it also enables the ML9XX31 to be manufactured in InGaAsP[2] semiconductor technology, benefiting from the economies of scale of large-scale production, unlike devices using lithium-niobate technology. The ML9XX31 laser diode also requires a lower applied voltage than lithium-niobate products, reducing power consumption and making the device easier to handle and operate.
The ML9XX31 laser diode is much more flexible for optical network system design because it enables designers to use the maximum of 46 wavelengths available throughout the C Band (1530-1565 nm), as specified by the International Telecommunications Union*. This is possible because Mitsubishi Electric has optimized the parameters of the DFB laser diode and EA modulator portions of the ML9XX31 chip for each wavelength point. As a result, designers have the maximum number of wavelengths to choose from, if they should want to multiplex several ML9XX31 laser diodes together to obtain data transmission rates potentially as high as 460 Gbps.
A key reason that the ML9XX31 is able to effectively transmit up to 50 km is because it features low chirp performance, enabling the device to deliver a power penalty of less than 2.0 decibels (dB). The device has a typical operating current of 60 milliamps at 5 milliwatts of output power, as well as a typical side mode suppression ratio of 40 dB. It also has typical rise and fall times of 30 picoseconds each, with an extinction ratio of 11 dB.
"Metropolitan area network expansion drives the market right now," said Daniel Chen, assistant vice president of high-frequency products for Mitsubishi Electric & Electronics USA, Inc. "This new laser diode delivers the high performance levels demanded for intermediate-reach DWDM transmissions over these networks. While performance is always paramount, cost is also an issue. By integrating the EA modulator with the laser diode, we have produced a smaller, more power-efficient light source capable of up to 50 km transmissions at a lower cost than lithium-niobate alternatives."
Packaging and Availability
The ML9XX31 laser diode is available in a chip-on-carrier package. Samples are available
now, with volume production scheduled for October 2002.
# # #
*NOTE: The International Telecommunications Union (ITU) requires that DWDM uses 0.8-nm spacing with 100-GHz spacing. Since 35 nm is the range for each wavelength in the ITU specification, 46 wavelengths are the maximum number of wavelengths available in the C Band (1530-1565 nm).
Definitions
[1] DWDM = Dense Wavelength Divisional Multiplexing
[2] InGaAsP = Indium Gallium Arsenide Phosphide
About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation offers a diverse range of optoelectronic products for SDH,
SONET, CWDM, DWDM, data communication, and FITL, as well as passive optical network
systems, test and instrumentation applications, and CATV distribution. The company markets
its optoelectronic products in North America through the Electronic Device Group of
Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc., are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi Electric combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset, and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including DRAM, flash, SRAM, ASIC, ASSP, MCU, microwave/RF, and optoelectronic devices.
Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.
Trademark Information
Mitsubishi and the Mitsubishi logo are registered trademarks of Mitsubishi Electric
Corporation in the U.S.A., Japan, and other countries.
Keywords
Mitsubishi, optoelectronic, laser, 10 Gbps, 10Gb/s, DFB, EAM, DWDM, MAN, network,
intermediate reach.
For More Information:
Positio Investor & Public Relations
Dave Richardson
(650) 815-1006, Ext. 108
dave@positiopr.com
Mitsubishi Electric & Electronics USA, Inc.
John Garner
(408) 774-3191
garner_john@edg.mea.com
