SUNNYVALE, Calif. — November 18, 2002 — The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., today announced a 40 gigabit per second (Gbps) electro-absorption (EA) modulator chip and module that demonstrate an input power tolerance of up to 15 dBm, the industry’s highest, combined with low chirp^[1]. Designed for C Band^[2], the devices’ high input power tolerance enables them to offer a significant transmission distance boost to 40 km without an optical amplifier when using dispersion-shifted fiber — double the distance of previous-generation devices. The new EA modulator products represent a significant cost and space advantage for DWDM^[3] applications compared to lithium-niobate alternatives.

"These EA modulator products represent a significant technological breakthrough for next-generation optical systems because they combine high input power capability, intermediate reach, and low chirp," said Daniel Chen, assistant vice president of high-frequency products for Mitsubishi Electric & Electronics USA, Inc. "Their small package size is an added bonus."

ML9XX38 Chip
Developed using InGaAsP^[4] technology, the ML9XX38 EA modulator chip uses an asymmetric quantum well absorption layer that is deposited on a semi-insulating indium-phosphide substrate. This layer prevents degradation of the optical waveform by photocarrier buildup, which normally occurs when an EA modulator is operated with high input power. As a result, the ML9XX38 chip attains a high input power of 15 dBm with a chirp parameter of less than 0.5 (at -0.5 volts). The chip occupies a tiny 0.3-mm x 0.3-mm footprint, making module integration easier.

FU-682PEM Module
The FU-682PEM EA modulator module integrates the ML9XX38 chip and a thermoelectric cooler. The module offers a high input power tolerance of 13 dBm with a low dispersion penalty of 2.0 dB (maximum) for 40-km transmissions that use dispersion-shifted fiber, along with an input impedance of 50 ohms. The module’s wide operating temperature range (0 to +70 degrees C) enables it to operate in a wide variety of environmental conditions. The FU-682PEM is housed in a 5-pin V connector package, occupying a 24-mm x 17-mm x 10-mm footprint, with a PMF^[5] pigtail.

Availability
ML9XX38 samples will be available in November 2002, with the volume production schedule to be determined, based on customer demand.

FU-682PEM samples will be available in December 2002.

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Definitions

[1] chirp = dynamic wavelength drift

[2] C Band = 1530-1565 nm wavelength range

[3] DWDM = dense wavelength division multiplexing

[4] InGaAsP = indium gallium arsenide phosphide

[5] PMF = polarization maintaining fiber

NOTE: A technical paper presentation on the base technology used in the ML9XX38 chip was presented at the European Conference on Optical Communication (ECOC 2002) in Copenhagen, Denmark.

About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation offers a diverse range of optoelectronic products for SDH, SONET, 10GbE, CWDM, DWDM, data communication, and OTDR applications, as well as passive optical network systems, test and instrumentation applications, and CATV distribution. The company’s optoelectronic product families conform to leading-edge current and future multi-source agreements such as XENPAK, X2, and XFP. Mitsubishi Electric markets its optoelectronic products in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.

Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc., are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi Electric combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset, and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including microcontroller, ASSP, ASIC, flash, SRAM, DRAM, optoelectronic, and microwave/RF devices.

Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.

Trademark Information
Mitsubishi and the Mitsubishi logo are registered trademarks of Mitsubishi Electric Corporation in the U.S.A., Japan, and other countries.

Keywords
Mitsubishi, optoelectronic, electro-absorption modulator, DWDM, 40 Gbps, 40 gigabit.

For More Information:

Positio Investor & Public Relations (for Mitsubishi Electric)
Dave Richardson
(650) 815-1006, Ext. 108
dave@positiopr.com

Mitsubishi Electric & Electronics USA, Inc.
John Garner
(408) 774-3191
garner_john@edg.mea.com 

Customer Contact:
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