Achieves High-Output Performance Through Window Structure
Technology That Prevents Catastrophic Optical Damage

SUNNYVALE, Calif. — September 10, 2002 — The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., today introduced two 980-nm ridge-wavelength pump laser diodes with technological breakthroughs. The ML861E5S laser diode achieves an ultra-high peak power output of 1,100 milliwatts (mW) without the danger of catastrophic optical damage (COD) for dense wavelength division multiplexing (DWDM) applications. The uncooled ML8627S laser diode offers an exceptionally stable wavelength in metropolitan area network applications throughout a wide operating temperature range. Both diodes are used as a pumping source for erbium doped fiber amplifiers (EDFAs).

"These pump laser diodes offer customers significant performance advancements," said Daniel Chen, assistant vice president of high-frequency products for Mitsubishi Electric & Electronics USA, Inc. "The ML861E5S offers an extremely high peak power output with a small laser beam aspect ratio for more effective long-distance DWDM applications. The uncooled ML8627S delivers exceptional wavelength stability in a cost-effective way for metropolitan area networks."

ML861E5S Pump Laser Diode
The ML861E5S pump laser diode achieves a 1,100-mW peak and 750-mW kink-level power output through an innovative window structure developed from quantum-well mixing using silicon-ion implantation. The window structure avoids COD damage because it does not absorb the light power output. The structure also reduces the laser beam’s aspect ratio to less than 2.5, enabling a more efficient coupling between the laser and optical fiber. The ML861E5S pump laser diode offers an exceptionally high typical operating power output of 500 mW and a reflectivity of less than 1 percent.

ML8627S Pump Laser Diode
The ML8627S pump laser diode uses facet coatings to stabilize the wavelength over a wide temperature range (5 to 85 degrees Celsius). This technology enables the device to achieve 20 percent less wavelength change than traditional 980-nm pump laser diodes. Facet coatings also offer a significant cost advantage over the fiber gratings traditionally used in pump laser diode modules for long-reach and submarine-cable communication networks. With the ML8627S pump laser diode being an uncooled device, customers save module space and reduce system cost because a thermal controller is unnecessary.

Technical paper presentations on the base technologies used in the ML861E5S and ML8627S pump laser diodes will be presented this week at the European Conference on Optical Communication (ECOC 2002) in Copenhagen, Denmark.

Packaging and Availability
The ML861E5S pump laser diode is available in a TO-CAN package or chip-on-carrier.

Samples of the ML861E5S are available now, with volume production scheduled for January 2003. Samples of the ML8627S pump laser diode will be available in January 2003.

• Output Power: 500 mW (typical at 25 degrees C)
• Threshold Current: 110 mA (typical at 25 degrees C)
• Reflectivity: Less than 1%
• Laser Beam Divergence: 8 degrees parallel; 19 degrees perpendicular
• Aspect ratio: Less than 2.5

• Output Power: 200 mW (typical at 25 degrees C)
• Threshold Current: 70 mA (typical at 25 degrees C)
• Wavelength Stability: 980 +/- 10 nm (0-200 mW; 0-70 degrees C)
• Laser Beam Divergence: 8 degrees parallel; 19 degrees perpendicular
• Aspect ratio: Less than 2.5

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About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation offers a diverse range of optoelectronic products for SDH, SONET, CWDM, DWDM, data communication, and FITL applications, as well as passive optical network systems, test and instrumentation applications, and CATV distribution. The company markets its optoelectronic products in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.

Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc., are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi Electric combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset, and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including DRAM, flash, SRAM, ASIC, ASSP, MCU, microwave/RF, and optoelectronic devices.

Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.

Trademark Information
Mitsubishi and the Mitsubishi logo are registered trademarks of Mitsubishi Electric Corporation in the U.S.A., Japan, and other countries.

Keywords
Mitsubishi, optoelectronic, 980-nm laser diode, pump laser diode, ridge wavelength laser diode.

For More Information:
Positio Investor & Public Relations
Dave Richardson
(650) 815-1006, Ext. 108
dave@positiopr.com

Mitsubishi Electric & Electronics USA, Inc.
John Garner
(408) 774-3191
garner_john@edg.mea.com