SUNNYVALE, Calif. — July 16, 2002 — The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., introduced an ultra-small gallium arsenide (GaAs) hetero-junction bipolar transistor (HBT) that is 35 percent smaller than today’s power amplifier modules for W-CDMA^[1] applications. Housed in a 6- x 6- x 1.5-mm package, the super small BA01212 power amplifier was developed in response to the constant demand to drive down the size and weight of mobile phones.

With increasing functionality demanded from today’s mobile phones for e-mail, packet communication and Internet access, as well as demands for longer talk-time performance, module power efficiency is a critical factor. To achieve this, Mitsubishi Electric developed a new transistor structure to optimize the transistor size and module circuit configuration. With this new transistor structure, the BA01212 is able to achieve a low operating voltage of 3.5 volts (V) and a low idle current of 50 milliamps (mA).

"The fashionable mobile phone and device user is constantly demanding smaller handsets," said Bryon Gutow, senior product marketing manager for microwave and radio frequency products at Mitsubishi Electric & Electronics USA, Inc. "The BA01212 allows that trend to continue. Low idle current performance at low radio frequency output operation is key to the W-CDMA system. We have optimized low idle current at 50 mA, realizing a 42 percent high efficiency rate and in turn extending talk-time performance."

In addition to the ultra-small package size, the GaAs HBT technology also eliminates the need for additional peripheral circuitry, further reducing size and space requirements. The BA01212 requires only a positive voltage, thereby making negative voltage generation circuits unnecessary. Similarly, integrating internal matching circuits that optimize distortion performance eliminates the need for external matching circuits.

Packaging and Availability

The BA01212 GaAs HBT is housed in a 6- x 6- x 1.5-mm LTCC^[2] substrate package with a metal cap. The device is available now in volume production.

• Frequency: 1920-1980 MHz
• Operating Voltage: Vcc = 3.5 V, Vref = 2.9 V
• Idle Current: Icqt = 50 mA (typical) with no RF input signal
• Operating current: Ict = 300 mA (typical) at Po = 26.5 dBm
• Efficiency: 42% (typical) at Po = 26.5 dBm
• RF Performance:
• Power Gain – Gp = 26.5 dB (typical)
• Adjacent channel power – ACLR5 = -37 dBc (max) at +/-5 MHz
• Adjacent channel power – ACLR10 = -48 dBc (max) at +/-10 MHz
• RX Noise power = -144 dBm/Hz (typical)

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Definitions
    [1] W-CDMA = Wideband Code-Division Multiple Access
    [2] LTCC = Low Temperature Cofired Ceramic

About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise, and high-power communications applications, including satellite and terrestrial transmitters and receivers, mobile radios, cellular phones, and subscriber units. The company produces gallium-arsenide (GaAs) FETs, modules, and MMICs using HBT, PHEMT, MESFET, HEMT, and HFET technologies. The company also produces silicon RF power transistors and modules using MOS and LDMOS technologies for the industrial and consumer markets. Mitsubishi Electric markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.

Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc., are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi Electric combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset, and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including DRAM, flash, SRAM, ASIC, ASSP, MCU, microwave/RF, and optoelectronic devices.

Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.

Keywords
Mitsubishi, CDMA, W-CDMA, GaAs, hetero-junction bipolar transistor, HBT.

For More Information:
Positio Investor & Public Relations
Dave Richardson
(650) 815-1006, Ext. 108
dave@positiopr.com

Mitsubishi Electric & Electronics USA, Inc.
John Garner
(408) 774-3191
garner_john@edg.mea.com