Mitsubishi Electric Drives Down Cost of High-Speed Internet Communication With New Uncooled 2.5-Gbps Laser Diodes

SUNNYVALE, Calif. — March 5, 2002 — Meeting the expanding demand for low-cost, high-speed Internet and data communications, the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., introduced two new high-performance, cost-effective, uncooled 2.5 gigabit-per-second (Gbps) laser diodes. The ML9XX19 InGaAsP^[1] distributed feedback (DFB) laser diode is designed for 1550-nm, long-reach CWDM^[2] communications up to 100 km, and the ML7XX19 InGaAsP Fabry-Perot (FP) laser diode meets demands for 1310-nm short-reach communications up to 2 km.

"These new products reflect Mitsubishi Electric’s continued effort to provide high-performing, highly reliable, and cost-effective laser diodes for long-reach and short-reach optical networking applications," said Daniel Chen, assistant vice president of high-frequency products for Mitsubishi Electric & Electronics USA, Inc. "These uncooled laser diodes substantially reduce space and power consumption over equivalent cooled products and have a greater resistance to wide environmental temperature swings."

Mitsubishi Electric’s ML9XX19 DFB laser diode delivers a cost-effective solution for long-reach, 2.5-Gbps CWDM applications such as trunklines for metropolitan area networks. The device operates over a wide temperature range (0 to +70 degrees Celsius) without needing a cooler, enabling it to have one-fifth the volume and one-half the power consumption of an equivalent cooled DFB laser diode. The ML9XX19 uses quarter-wavelength phase-shifted grating to achieve stable single-mode operation, which results in a lower bit error rate throughout its wide temperature range. The device is also available in a standard TO-CAN package, which makes design easier and lowers overall system costs. Other features include a typical side mode suppression ratio of 40 decibels (dB), a dispersion penalty of 1.5 dB, and typical rise and fall times of 100 picoseconds (ps) each.

Mitsubishi Electric’s ML7XX19 FP laser diode delivers high-speed performance to cost-sensitive optical box-to-box links. The FP technology enables the laser diode to offer extremely reliable performance at a typical output power of 5 milliwatts throughout an extremely wide temperature range (-40 to +85 degrees Celsius). The device reduces system design cost by not requiring a cooler and by using a standard TO-CAN package, resulting in modules with smaller footprints and lower power consumption. The device is designed for single transverse mode oscillation because it enables a more stable signal and improved transmission characteristics, such as lower bit error rates. It also has a relaxation oscillation frequency of 6.5 gigahertz (at 25 degrees Celsius) and has typical rise and fall times of 80 ps each.

Packaging and Availability
The ML9XX19 and ML7XX19 laser diodes are each available in a 5.6-mm TO-CAN package. Each device will also be available in a 3.8-mm TO-CAN package in the second quarter of 2002.

Both the ML9XX19 and ML7XX19 are in volume production.

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Definitions
[1] InGaAsP = Indium Gallium Arsenide Phosphide

[2] CWDM = Coarse Wavelength Divisional Multiplexing

About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation offers a diverse range of optoelectronic products for SDH, SONET, CWDM, DWDM, data communication, and FITL, as well as passive optical network systems, test and instrumentation applications, and CATV distribution. The company markets its optoelectronic products in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.

Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc., are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset, and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including DRAM, flash, SRAM, ASIC, ASSP, MCU, microwave/RF, and optoelectronic devices.

Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.

Trademark Information
Mitsubishi and the Mitsubishi logo are registered trademarks of Mitsubishi Electric Corporation in the U.S.A., Japan, and other countries.

Keywords
Mitsubishi, optoelectronic, DFB laser, FP laser, 2.5 Gbps, 2.5Gb/s, CWDM, MAN, trunkline, network, long reach, short reach.

For More Information:
Positio Investor & Public Relations
Dave Richardson
(650) 815-1006, Ext. 108
dave@positiopr.com

Mitsubishi Electric & Electronics USA, Inc.
John Garner
(408) 774-3191
garner_john@edg.mea.com