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FOR IMMEDIATE RELEASE No.2638

Mitsubishi Electric Develops C-band Gallium Nitride High-Electron Mobility Transistors for Satellite Earth Stations


Tokyo, November 29, 2011
- Mitsubishi Electric Corporation (TOKYO: 6503) announced today it has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4-8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a sample basis beginning January 10, 2012.
Left: MGFC50G5867   Right: MGFC47G5867

Left: MGFC50G5867
Right: MGFC47G5867

Gallium Arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters. In recent years, however, Gallium Nitride (GaN) amplifiers have become increasingly popular due to their high breakdown-voltage and power density, high saturated electron speed and ability to contribute to power saving and the downsizing of power transmitter equipment. Mitsubishi Electric first began sample shipments of high-output GaN HEMT amplifiers for C-band space application in March 2010.

High output power, efficiency and high-voltage operation
-100 W or 50 W output power
-More than 43% of power added efficiency
-40 V high-voltage operation
Low Distortion
-Output power meeting 3rd-order Inter Modulation (IM3) = -25dBc of 46dBm
-Internally impedance- matched

Other Features

MGFC50G5867 MGFC47G5867
Operating
Conditions
VDS 2 40 V 40 V
IDQ 3 1.15 A 0.58 A
Frequency 5.86.7 GHz (C band)
Output Power of
3dB Compression
P3dB
(Typ.)
50 dBm
(100 W)
47 dBm
(50 W)
Linear Power
Gain
Glp 4
(Typ.)
10 dB 10 dB
Power Added Efficiency PAE 5
(Typ.)
43 % 45 %
2 Drain to Source Voltage
3 Quiescent Drain Current
4 @ frequency = 6.4 GHz
5 Power Added Efficiency (@P3dB, frequency = 6.4 GHz)

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