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FOR IMMEDIATE RELEASE No. 3164

Mitsubishi Electric's New 6.5 kV Full-SiC Power Semiconductor Module Achieves World's Highest Power Density

Will lead to smaller, more efficient power equipment for railcars and electric power systems

TOKYO, January 31, 2018 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module that is believed to offer the world's highest power density (calculated from rated voltage and current) among power semiconductor modules rated from 1.7 kV to 6.5 kV. The unprecedented power density is made possible by the model's original structure with integrated metal-oxide-semiconductor field-effect transistor (MOSFET) and diode on single chip and its newly developed package. Mitsubishi Electric expects the module to lead to smaller and more energy-efficient power equipment for high-voltage railcars and electric power systems. Going forward, the company will continue to further develop the technology and conduct further reliability tests.

Prototype of 6.5 kV full-SiC power semiconductor module

Prototype of 6.5 kV full-SiC power semiconductor module

Features

1) Highest rated voltage in full-SiC modules should lead to smaller and more efficient power electronics equipment

- 6.5 kV rated voltage is highest among silicon insulated-gate bipolar transistor (IGBT) power semiconductor modules
- Full-SiC technology improves power density and efficiency and enables higher operating frequencies for smaller and more energy-efficient high-voltage power electronics equipment

2) Original one-chip structure and new package for high heat dissipation and high heat tolerance

- Chip area reduced drastically thanks to integrating MOSFET and diode on single chip
- Insulating substrate with superior thermal properties and reliable die bonding technology facilitate heat dissipation and heat tolerance
- 9.3 kVA/cm3 power density is world's highest among power semiconductor modules rated from 1.7 kV to 6.5 kV

Full-SiC Power Semiconductor Module vs. Conventional Silicon IGBT Module

  Power density Power loss Assumed
operating frequency
Full-SiC module 1.8* 1/3 4
Conventional silicon IGBT module 1** 1 1
Note:  Values normalized to corresponding values of Mitsubishi Electric's conventional silicon IGBT module
* Corresponds to 9.3 kVA/cm3
** Corresponds to 5.1 kVA/cm3

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