Semiconductors & Devices

Power Modules for Power Applications : SiC ApplicationPower Modules for Power Applications : SiC Application

Development of Mitsubishi Electric SiC Power Devices
and Power Electronics Equipment Incorporating Them

Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics,
we succeeded in developing various elemental technologies.
In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device.
Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery.
We will continue to provide competitive SiC power modules with advanced development and achievements from now on.

>Development of Mitsubishi Electric SiC Power Devices and Power Electronics Equipment Incorporating Them

  • *1 Researched on press releases by Mitsubishi Electric.  *2 Currently under development, as of May 2015.
  • *
    The year and month listed are based on press releases or information released during the product launch month in Japan.
  • Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO).

R&D SiC Power Devices

SiC with superior characteristics

SiC with superior characteristics

Power loss reduced

SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.

SiC with superior characteristics

High-temperature operation

When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

SiC with superior characteristics

High-speed switching operation

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

SiC with superior characteristics

Heat dissipation

SiC has three times the heat conductivity of silicon, which improves heat dissipation.

SiC power modules appropriated by application

Application Product name Model Rating Connection States
Voltages[V] Current[A]
Hybrid SiC-IPM PMH200CS1D060 600 200 6-in-1 Commercially available
PMH75-120-Sxxx* 1200 75 6-in-1 Sample available
Full SiC-IPM PMF75-120-Sxxx* Sample available
Full SiC Power Modules FMF400BX-24A 1200 400 4-in-1 Sample available
FMF800DX-24A 1200 800 2-in-1 Sample available
Hybrid SiC Power Modules for
High-frequency Switching
CMH100DY-24NFH 1200 100 2-in-1 Sample available
CMH150DY-24NFH 150
CMH200DU-24NFH 200
CMH300DU-24NFH 300
CMH400DU-24NFH 400
CMH600DU-24NFH 600
Large Hybrid SiC DIPIPMTM for PV Application PSH50YA2A6 600 50 4-in-1 Commercially available
Traction Hybrid SiC Power Modules CMH1200DC-34S 1700 1200 2-in-1 Commercially available
Hybrid SiC DIPPFCTM PSH20L91A6-A 600 20Arms nterleaved Commercially available
Full SiC DIPPFCTM PSF20L91A6-A Commercially available

*Tentative No.

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