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Semiconductors & Devices

High Frequency Devices

GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4941AL

Parameter Level Value Unit
Supply situation   In production  
Frequency Typ 12 GHz
Drain-Source Voltage Typ 2 V
Drain Current   10 mA
Package   GD-32  
Noise Figure   0.35(typ) 0.50(max) dB
Associated Gain   12.0(min) 13.5(typ) dB
Quarity level   -  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 04/25/2011 pdf PDF 186KB English
S-parameter - 05/11/2011 txt S2P 3KB -