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Semiconductors & Devices

High Frequency Devices

GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4941CL

Parameter Level Value Unit
Supply situation   In production  
Frequency Typ 25.2 GHz
Drain-Source Voltage Typ 1.5 V
Drain Current   VGS=0V mA
Package   GD-32  
Noise Figure   2.40(typ) 3.80(max) dB
Associated Gain   7.5(min) 10.0(typ) dB
Quarity level   AEC-Q 101 qualified  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

AEC : Automotive Electronics Council
RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 03/12/2015 pdf PDF 130KB English
S-parameter - 03/16/2015 txt S2P 3KB -