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Semiconductors & Devices

High Frequency Devices

GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4965BM

Parameter Level Value Unit
Supply situation   In production  
Frequency Typ 20 GHz
Drain-Source Voltage Typ 2 V
Drain Current   10 mA
Package   GD-30  
Noise Figure   0.95(typ) 1.25(max) dB
Associated Gain   9.5(min) 11.5(typ) dB
Quarity level   -  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 03/16/2015 pdf PDF 290KB English
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