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Semiconductors & Devices

High Frequency Devices

GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFG5H1503

Parameter Level Value Unit
Supply situation   In production  
Frequency   13.75~14.5 GHz
Drain-Source Voltage Typ 24 V
Output Power Typ 20 W
Package   GF-65  
Power Added Efficiency Typ - %
Linear Power Gain Typ 18.0(min) 20.0(typ) dB
Output Power at 3dB Gain Compression   41.0(min) 43.0(typ)  
3rd order InterModulation distortion   - dBc
Product Type   MMIC  
RoHS Directive   -  

Remarks

MMIC : Monolithic Microwave Integrated Circuit

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 01/12/2015 pdf PDF 165KB English