Skip to main content

Start main contents


Semiconductors & Devices

High Frequency Devices

GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFG5H3001

Parameter Level Value Unit
Supply situation   Under development  
Frequency   27.5~31 GHz
Drain-Source Voltage Typ 24 V
Output Power Typ 1.5 W
Package   GF-71  
Power Added Efficiency Typ 12 %
Linear Power Gain Typ 11.0(min) 15.0(typ) dB
Output Power at 3dB Gain Compression   -  
3rd order InterModulation distortion   -25dBc dBc
Product Type   -  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 10/09/2017 pdf PDF 169KB English