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Semiconductors & Devices

High Frequency Devices

GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFK49G3745

Parameter Level Value Unit
Supply situation   In production  
Frequency   13.75~14.5 GHz
Drain-Source Voltage Typ 24 V
Output Power Typ 80 W
Package   GF-38  
Power Added Efficiency Typ 28 %
Linear Power Gain Typ 6.5(min) 7.5(typ) dB
Output Power at 3dB Gain Compression   48.0(min) 49.0(typ)  
3rd order InterModulation distortion   -25(min) dBc
Product Type   IMFET  
RoHS Directive   -  

Remarks

IMFET : Internally Matched Field Effect Transistor

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