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Semiconductors & Devices

High Frequency Devices

GaN High Frequency Devices High Power GaN HEMT for Satellite Comm. MGFK50G3745

Parameter Level Value Unit
Supply situation   In production  
Frequency   13.75~14.5 GHz
Drain-Source Voltage Typ 24 V
Output Power Typ 100 W
Package   GF-69  
Power Added Efficiency Typ 30 %
Linear Power Gain Typ 8.0(min) 9.2(typ) dB
Output Power at 3dB Gain Compression   49.0(min) 50.2(typ)  
3rd order InterModulation distortion   -25(min) dBc
Product Type   IMFET  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

IMFET : Internally Matched Field Effect Transistor
RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 01/10/2018 pdf PDF 183KB English