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Semiconductors & Devices

High Frequency Devices

GaN High Frequency Devices GaN HEMT for Mobile Communication BTS MGFS39G38L2

Parameter Level Value Unit
Supply situation   In production  
Frequency   2.5~3.8 GHz
Drain-Source Voltage Typ 50
Output Power Typ 9 W
Package   GF-67  
Power Added Efficiency   60 %
Linear Power Gain   16.5(min.) 18(typ.) dB
Output Power at 3dB Gain Compression   - dBm
Product Type   Unmatched FET  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

Unmatched FET : Un-matched Field Effect Transistor
RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 11/10/2017 pdf PDF 335KB English