Skip to main content

Start main contents


Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FET Modules RA07M1317M

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 7.2 V
Frequency (Min - Max)   135~175 MHz
Output Power   6.5 W
Package   H46S  
Input Power Typ 20 mW
Drain Efficiency (Min)   45 %
Feature   -  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 05/29/2017 pdf PDF 574KB English