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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FET Modules RA60H3847M1

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 12.5 V
Frequency (Min - Max)   378~470 MHz
Output Power   60 W
Package   H2M  
Input Power Typ 50 mW
Drain Efficiency (Min)   40 %
Feature   -  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 06/07/2017 pdf PDF 608KB English