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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD01MUS2B

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 7.2 V
Freqency   527 MHz
Output Power (Min)   1 W
Package   SOT-89  
Input Power (Typ)   0.03 W
Drain Efficiency (Min)   60 %
Feature   built in Gate Protection Diode  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 05/28/2017 pdf PDF 3905KB English
S-parameter - 05/28/2017 txt S2P 184KB English