Skip to main content

Start main contents


Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD06HVF1

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 12.5 V
Freqency   175 MHz
Output Power (Min)   6 W
Package   TO-220S  
Input Power (Typ)   0.3 W
Drain Efficiency (Min)   60 %
Feature   built in Gate Protection Diode  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 07/28/2017 pdf PDF 414KB English