Silicon RF Devices RF High Power MOS FETs (Discrete) RD09MUP2
Parameter | Level | Value | Unit |
---|---|---|---|
Supply situation | In production | ||
Drain Voltage | Typ | 7.2 | V |
Freqency | 520 | MHz | |
Output Power (Min) | 8 | W | |
Package | PMM | ||
Input Power (Typ) | 0.8 | W | |
Drain Efficiency (Min) | 50 | % | |
Feature | built in Gate Protection Diode | ||
RoHS Directive | 2011/65/EU RoHS2 Compliant |
Remarks
RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment