Silicon RF Devices RF High Power MOS FETs (Discrete) RD09MUP2
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Supply situation | In production | ||
| Drain Voltage | Typ | 7.2 | V |
| Freqency | 520 | MHz | |
| Output Power (Min) | 8 | W | |
| Package | PMM | ||
| Input Power (Typ) | 0.8 | W | |
| Drain Efficiency (Min) | 50 | % | |
| Feature | built in Gate Protection Diode | ||
| RoHS Directive | 2011/65/EU RoHS2 Compliant |
Remarks
RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment
Related documents
| Document type | Title | Updated date | File type | File size | Language |
|---|---|---|---|---|---|
| S-parameter | - | 06/02/2017 |  S2P |
122KB | English |