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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1C

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 12.5 V
Freqency   30 MHz
Output Power (Min)   100 W
Package   Ceramic(Large)  
Input Power (Typ)   7 W
Drain Efficiency (Min)   55 %
Feature   -  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 05/28/2017 pdf PDF 268KB English
S-parameter - 06/02/2017 txt S2P 121KB English