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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD12MVP1

Parameter Level Value Unit
Supply situation   Under development  
Drain Voltage Typ 7.2 V
Freqency   175 MHz
Output Power (Min)   10 W
Package   PMM  
Input Power (Typ)   0.5 W
Drain Efficiency (Min)   55 %
Feature   built in Gate Protection Diode  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 08/21/2017 pdf PDF 200KB English
S-parameter - 08/21/2017 txt S2P 25KB English