Skip to main content

Start main contents

Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD12MVS1

Parameter Level Value Unit
Supply situation   Under development  
Drain Voltage Typ 7.2 V
Freqency   175 MHz
Output Power (Min)   11.5 W
Package   SLP  
Input Power (Typ)   1 W
Drain Efficiency (Min)   55 %
Feature   built in Gate Protection Diode  
RoHS Directive   2011/65/EU RoHS2 Compliant  


RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 07/28/2017 pdf PDF 431KB English