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Semiconductors & Devices

High Frequency Devices

Silicon RF Devices RF High Power MOS FETs (Discrete) RD35HUP2

Parameter Level Value Unit
Supply situation   In production  
Drain Voltage Typ 12.5 V
Freqency   175 / 530 MHz
Output Power (Min)   35(typ) W
Package   HPM  
Input Power (Typ)   3 W
Drain Efficiency (Min)   55(typ) %
Feature   built in Gate Protection Diode  
RoHS Directive   2011/65/EU RoHS2 Compliant  

Remarks

RoHS2 : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

Related documents

Document type Title Updated date File type File size Language
Data Sheet - 02/26/2019 UPDATE pdf PDF 1184KB English
S-parameter - 05/28/2017 txt S2P 169KB English