Semiconductors & Devices

GaAs High Frequency DevicesGaAs High Frequency Devices

Outline

Mitsubishi's GaAs devices support the creation of an IT society.

High-speed Internet, video on demand, high-speed data communications and other forms of communication networks are growing rapidly. Mitsubishi's GaAs devices provide optimized solutions towards the realization of an IT society with a wide-ranging lineup of products for satellites, base stations and mobile phone handsets.

Features

  • Internally matched Medium/high power discrete FETs that are suitable for high-efficiency and low-distortion W-CDMA base stations
  • GaAs FET power amplifier modules that boast a lowest-in-class level of 0.03cc, compatible with the 800MHz band/1.5GHz band of the PDC system.
  • Transmission modules with a capacity of just 0.1cc contribute considerably to the miniaturization of triple-band mobile handsets.

Main Applications

Mobile phone handsets/mobile phone base stations/devices for installation on satellites


Selectmap

Low-noise GaAs FET/HEMT

Low-noise GaAs FET/HEMT

High-power GaAs FET (discrete)

High-power GaAs FET (discrete)

High-power GaN FET (Discrete)

High-power GaN FET (Discrete)

Internally Matched High-power GaAs FET

Internally Matched High-power GaAs FET

GaAs Power Amplifier for Mobile Handsets

GaAs Power Amplifier for Mobile Handsets

GaAs Power Amplifier for WiMax/Wi-Fi

GaAs Power Amplifier for WiMax/Wi-Fi