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Semiconductors & Devices

GaAs High Frequency DevicesGaAs High Frequency Devices

Outline

GaAs (Gallium Arsenide) high frequency devices which are the most suitable compound semiconductors for satellite broadcasting receivers, communication receiving devices and satellite communication receivers.

In equipment for receiving radio waves from satellites, HEMT devices are used to amplify weak signals without generating noise.

Mitsubishi Electric has achieved lower noise through improvements in device structures including miniaturized gate lengths, and packaging structure, contributing to smaller satellite broadcasting receivers, and smaller and lower-cost receivers.

Features

Low noise / Various product lineup

Main Applications

Direct Broadcasting Satellite (DBS) / Satellite Digital Audio Radio Service (SDARS) / Global Positioning System (GPS) / Automotive / etc


Selection Map

Low Noise GaAs HEMTs

Low Noise GaAs HEMTs MGF4921AM MGF4921AM MGF4934CM MGF4935AM MGF4937AM MGF4941AL MGF4941CL MGF4964BL MGF4965BM
  • ★:New Product
  • ■:AEC-Q101 qualified
  • FET:Field Effect Transistor
  • HEMT:High Electron Mobility Transistor

Related Datasheets

Small Signal GaAs FET / HEMTs, InGaP HBT

Small Signal GaAs FET / HEMTs, InGaP HBT MGF3022AM MGF4841AL MGF4841CL
  • ■:AEC-Q101 qualified
  • HBT:Heterojunction Bipolar Transistor

Related Datasheets


Notes

Data Sheets

View data sheets for GaAs High Frequency Devices