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Semiconductors & Devices

Silicon RF DevicesSilicon RF Devices

Outline

Mitsubishi Silicon RF devices support wireless communication networks.

Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.

Selection Map

3.6V Operation RF High Power MOS FET (Discrete)

3.6V Operation High Output Power MOS FET (Discrete) RD02LUS2 RD04LUS2

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7.2V Operation RF High Power MOS FET (Discrete)

7.2V Operation High Output Power MOS FET (Discrete) RD12MVP1 RD12MVS1 RD08MUS2 RD07MUS2B RD09MUP2 RD10MMS2 RD05MMP1 RD01MUS2 RD02MUS2 RD01MUS2B

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12.5V Operation RF High Power MOS FET (Discrete)

12.5V Operation High Output Power MOS FET (Discrete) RD100HHF1C RD70HUP2 RD70HVF1C RD60HUF1C RD35HUP2 RD16HHF1 RD15HVF1 RD06HHF1 RD06HVF1 RD04HMS2

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7.2V Operation RF High Power MOS FET Module

7.2V Operation High Output Power MOS FET Module RA07M1317M RA07M3847M RA07M4452M RA03M8087M RA03M8894M

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9.6V Operation RF High Power MOS FET Module

9.6V Operation High Output Power MOS FET Module RA08N1317M RA07N4047M RA07N4452M

★:New Product

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12.5V Operation RF High Power MOS FET Module

12.5V Operation High Output Power MOS FET Module RA80H1415M1 RA60H1317M1A RA60H1317M1B RA60H3340M1A RA60H3847M1 RA60H3847M1A RA60H4452M1 RA60H4452M1A RA33H1516M1 RA30H1317M1 RA30H1317M1A RA30H3847M1 RA30H3847M1A RA30H4452M1 RA30H4452M1A RA30H2127M1 RA08H1317M RA07N4047M RA07N4452M

★:New Product

Related Datasheets

Notes

  • ADS/MWO Non-linear models, Reliability data are available for most of our devices. Please contact sales representative.

Data Sheets

View data sheets for Silicon RF Devices