Semiconductors & Devices

HVIGBT ModulesHVIGBT Modules

Outline

Our lineup of HVIGBT (Hihg Voltage Insulated Gate Bipolar Transistor) modules replaces the thyristors and GTO thyristors used in power electronic equipment, such as trains and large-sized industrial machines, that require high voltage and high current, and supports the miniaturization of drive circuits and the increased lightness and efficiency of systems.

Features (R Series)

  • Built-in planar IGBT
  • Built-in soft recovery diode
  • AISiC base board
  • Strong insulation (Viso 10.2kV, AC 1min) packages are also included in the lineup
  • Expansion of range of operating temperatures

Main Applications

Inverter devices/converter devices/DC chopper devices

Functions (R Series)

Connection VCES
(V)
Viso
(kV)
IC(A)
750 800 1000 1200 1500
H Image of connection H 3300 6.0     CM1000HC
-66R
  CM1500HC
-66R
10.2         CM1500HG
-66R
★★
4500 6.0   CM800HC
-90R
★★
  CM1200HC
-90R
CM1200HC
-90RA
 
10.2   CM800HG
-90R
  CM1200HG
-90R
 
6500 10.2 CM750HG
-130R
       
E4 Image of connection E4 3300 6.0     CM1000E4C
-66R
   

★★Under Development


Data Sheets

View data sheets for HVIGBT Modules