Semiconductors & Devices

HVIGBT Modules/HVIPMHVIGBT Modules/HVIPM

Outline

Our lineup of HVIGBT (High Voltage Insulated Gate Bipolar Transistor) modules replaces the thyristors and GTO thyristors used in power electronic equipment, such as trains and large-sized industrial machines, that require high voltage and high current, and supports the miniaturization of drive circuits and the increased lightness and efficiency of systems.


Containing a built-in dedicated drive circuit to extract more performance from the IGBT chip, HVIPM (High Voltage Intelligent Power Module) is a high-function module with a dedicated IC for self-protection functions (for over-current, undervoltage of control power supply and over-heating). The lineup includes a product with the maximum rating for an IPM of 3.3kV/1.2kA and features further contributions to miniaturization and energy savings in large-capacity inverter devices.

Features

<R Series>

  • Built-in planar IGBT
  • Built-in soft recovery diode
  • AISiC base board
  • Strong insulation (Viso 10.2kV, AC 1min) packages are also included in the lineup
  • Expansion of range of operating temperatures

<HVIPMs>

  • Dielectric strength voltage: 6,000V (1 minute at AC)
  • AISiC base board
  • Built-in over-current protection, over-hearing protection and protection against undervoltage of control power supply
  • Control connector

Main Applications

Inverter devices/converter devices/DC chopper devices

Functions

<R Series>

Connection VCES
(V)
Viso
(kV)
IC(A)
750 800 1000 1200 1500
H Image of connection H 3300 6.0     CM1000HC
-66R
  CM1500HC
-66R
10.2         CM1500HG
-66R
★★
4500 6.0   CM800HC
-90R
★★
  CM1200HC
-90R
CM1200HC
-90RA
 
10.2   CM800HG
-90R
  CM1200HG
-90R
 
6500 10.2 CM750HG
-130R
       
E4 Image of connection E4 3300 6.0     CM1000E4C
-66R
   

★★Under Development


<HVIPMs>

Connection VRRM
(V)
IDC(A)
1200
H Image of connection H 3300 PM1200HCE330-1
PM1

Data Sheets

View data sheets for HVIGBT Modules/HVIPM