HVIGBT Modules/HVIPMHVIGBT Modules/HVIPM

Outline

This is a lineup of HV (High Voltage) IGBT modules that provide size reduction of the drive circuit, weight reduction of the system, and improved efficiency, allowing use in power electronics equipment, such as electric railways and large industrial machines which require high withstanding and large current, in substitution for thyristor or GTO thyristor.
The lineup includes products having withstanding from 1.7kV to 6.5kV, contributing to high reliability as well as energy efficiency for large capacity inverter equipment.
In addition to the main H series, the new lineup includes the X series, which further advances the R series in weight reduction with a high insulation package.
The lineup also includes next generation large capacity power semiconductor modules with package interchangeability, for design efficiency and stable supply for the output capacity of power conversion equipment.

Main Applications

Inverter devices/converter devices/DC chopper devices

HVIGBT Module X-Series

  • <Standard package>
  • CSTBT (7th generation IGBT) and RFC diode*1 inside
  • Uses structure optimization*2 at the chip end region to reduce thermal resistance by approximately 10%*3
  • Increases current capacity by approximately 50% in comparison to H series
  • Optimizes package structure to improve power cycle work life
  • Guarantees 150°C operating temperature (Tj) in all withstanding classes*4
  • Reduces weight by using an AlSiC base plate
  • The H series and R series are interchangeable in external shape

  • *1 RFC: Relaxed Field of cathode diode
      A diode that can control the sudden voltage rise by adding a Playerto a portion of the cathode side and
      injecting holes during recovery in order to soften the recovery waveform
  • *2 LNFLR: Linearly-Narrowed Field Limiting Ring
  • *3 In comparison to the R series (CM750HG-130R)
  • *4 World’s first at 6.5kV (April 2016 company investigation)

  • Characteristic graphs
Characteristic graphs

  • <LV100/HV100 package>
  • CSTBT (7th generation IGBT) and RFC diode*1 inside
  • Structures package to reduce internal inductance
  • Uses common external dimensions for 2 types of package with differing insulation withstanding*2
  • Optimizes terminal configuration in consideration of parallel connections
  • Interchangeable with products of other companies*3 due to same external dimensions (terminals, installation position)

  • *1 RFC: Relaxed Field of Cathode Diode
      A diode that can control the sudden voltage rise by adding a Player to a portion of the cathode side and
      injecting holes during recovery in order to soften the recovery waveform
  • *2 HV100/LV100 type
  • *3 XHP2/XHP3 products of German semiconductor maker Infineon Technologies AG

  • Package photographs
Package photographs

Data Sheets

View data sheets for HVIGBT Modules/HVIPM