Composite semiconductors possessing high-frequency operation and light-emitting/light-receiving properties are being used widely, with the main applications being in the field of information communications sector. By increasing device functionality and efficiency while simultaneously reducing size, Mitsubishi Electric is supporting the realization of information communications systems that have a minimal impact on the environment.
||1 : High-frequency Devices
Figure 1.1 illustrates a system with some of the typical high-frequency devices currently being used in the market and the main range of applications for each type of device. For high-output, high-frequency wireless communications equipment, where the use of silicon (Si) semiconductors has been difficult, composite semiconductors such as those made of gallium arsenic (GaAs) are now being used in transceivers for wireless communication signals.
*1 LDMOS : Laterally Diffused MOS
*2 HFET : Heterostructure Field-Effect Transistor
*3 HBT : Heterojunction Bipolar Transistor
*4 HEMT : High Electron Mobility Transistor
*5 CMOS : Complementary Metal Oxide Semiconductor