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Mitsubishi Electric to Launch High-efficiency, Low-power consumption Metal Oxide Semiconductor Field Effect Transistor for 2-way Radios

RD01MUS2B to go on sale December 1

Tokyo, November 8, 2011 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of a 7.2V high-efficiency, low-power consumption metal oxide semiconductor field effect transistor (MOSFET) on December 1. The RD01MUS2B is designed for use in high-frequency power amplifier devices for advanced walkie-talkie-type commercial, family radio service (FRS) or general mobile radio service (GMRS) systems, which are drawing attention for their practicality during emergencies. Initial production has been set at 200,000 units per month.


High efficiency and low-power consumption for extended performance in field
-Highly efficient operation, including a drain efficiency of 70% at 527MHz, enables amplifiers to convert electricity into high-frequency waves at a high rate.
-Standby consumption current of 40mA represents a 60% reduction compared to predecessor RD01MUS2.
Wide margin of transmission power output for more flexible radio designs
-1.6W power output at 527MHz is a 14% improvement over predecessor RD01MUS2.
-Improved transmission power output allows greater flexibility in radio designs.
High tolerance to current surges enables simplified surge protection in radios
-Diode embedded between MOSFET gate and source protects devices against current surges.
-Optimized internal structure provides double tolerance to current surges between drain and source compared to predecessor RD01MUS2.
Electrical Characteristics
Conditions: Vds=7.2V, Drain quiescent current=40mA, Frequency=527MHz and Power input=30mW
Power output: 1.6 W (typ)
Drain efficiency: 70 % (typ)