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Mitsubishi Electric to Release Sample 220W-output power GaN-HEMT for 2.6GHz-band 4G Mobile Communication Base Transceiver Stations

For BTS small size and low power consumption by high performance

TOKYO, August 31, 2016 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a 220W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering world-leading* efficiency for 2.6GHz-band Base Transceiver Stations (BTS) of fourth-generation (4G) mobile communication systems. Samples will be released starting November 1.

* According to Mitsubishi Electric as of August 31, 2016
New GaN-HEMT for 2.6GHz 4G BTS (MGFS53G27ET1)

New GaN-HEMT for 2.6GHz 4G BTS (MGFS53G27ET1)

High-speed 4G mobile communication systems including Long Term Evolution (LTE) and LTE-Advanced incorporate are being equipped with progressively smaller BTS for macro-cells to increase data capacity and to reduce power consumption. Mitsubishi Electric's highly efficient new GaN-HEMT for 2.6GHz-band macro-cell BTS is expected to help realize even smaller and lower-power BTS.

Product Features
1) World-leading efficiency and transistor optimization
-High drain efficiency** of 74%
-High efficiency results in simpler cooling system, which reduces BTS size and power consumption
2) Size reduction
-Flangeless ceramic package reduces size of device itself and related power amplifier modules
3) Expanded GaN-HEMT lineup
-Added flangeless ceramic package for 220W models for 2.6GHz-band macro-cell BTS
** Load pull measurement