FOR IMMEDIATE RELEASE No. 3298
TOKYO, September 2, 2019 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that in collaboration with the Research Center for Ubiquitous MEMS and Micro Engineering, National Institute of Advanced Industrial Science and Technology (AIST), it has developed a gallium nitride-high electron mobility transistor (GaN-HEMT) in a multi-cell structure (multiple transistors cells arranged in parallel) bonded directly to a single-crystal diamond heat-dissipating substrate with high thermal conductivity. The direct bonding of a multi-cell GaN-HEMT to a single-crystal diamond substrate is believed to be the world's first.* The new GaN-on-Diamond HEMT will improve the power-added efficiency of high-power amplifiers in mobile communication base stations and satellite communications systems, thereby helping to reduce power consumption. Mitsubishi Electric will refine the GaN-on-Diamond HEMT prior to its commercial launch targeted for 2025.
New GaN-on-Diamond HEMT View from above and cell structure
Cross-sectional view of new GaN-on-Diamond HEMT
Mitsubishi Electric handled the design, manufacture, evaluation and analysis of the GaN-on-Diamond HEMT and AIST developed the direct bonding technology. A part of this achievement is based on results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO).
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