• Semiconductors & Devices


TOKYO, October 21, 2021 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its 100Gbps (53Gbaud) four-level pulse-amplitude modulation (PAM4) electro-absorption modulator (EML) laser diode chip for coarse wavelength division multiplexing (CWDM) on November 1. The semiconductor diode is expected to be applied in sets of four EML chips as a light source in optical transceivers for 400Gbps optical fiber communication in data centers. Thanks to the new EML's operability in a wider range of temperatures, it will help to lower the power consumption and costs of optical transceivers by eliminating the need for conventional temperature-control units.

  1. 1)High-speed, wider-temperature operation with unique hybrid waveguide structure
    • Unique hybrid waveguide structure (Fig. 1) combines a buried heterostructure laser diode for high optical-output-power and a high-mesa waveguide electro absorption modulator (EAM) for a high extinction ratio and wide frequency range.
    • 53Gbaud PAM4 operation is available in temperatures ranging from 5 to 85°C (Fig. 2) due to optimized design parameters for the laser diode and modulator sections.
  2. 2)Reduces power consumption and costs of optical transceivers
    • Operability in a wider-temperature range eliminates the need for chip temperature control units in optical transceivers, thereby reducing both power consumption and costs.
    • By enabling low-power optical transceivers, helps to reduced power consumption in data centers.

Sales Schedule

Product Model Wavelength Temperature range Shipment date
Wider-temperature-range CWDM 100Gbps
(53Gbaud PAM4) EML chip
ML7CP70 1271,1291,
1311 and 1331 nm
5 to 85°C November 1, 2021


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