GaAs High Frequency Devices

GaAs (Gallium Arsenide) high frequency devices which are the most suitable compound semiconductors for satellite broadcasting receivers, communication receiving devices and satellite communication receivers.
In equipment for receiving radio waves from satellites, HEMT devices are used to amplify weak signals without generating noise.
Mitsubishi Electric has achieved lower noise through improvements in device structures including miniaturized gate lengths, and packaging structure, contributing to smaller satellite broadcasting receivers, and smaller and lower-cost receivers.


Low noise / Various product lineup

Main Applications

Direct Broadcasting Satellite (DBS) / Satellite Digital Audio Radio Service (SDARS) / Global Positioning System (GPS) / Automotive / etc

Low Noise GaAs HEMTs

Selection Map

Click the model name for details (You can enlarge it for viewing)

■ : AEC-Q101 Rev.C qualified

HEMT : High Electron Mobility Transistor

:4-pin Mold Package (GD-30)


  • Space Qualified Devices are available. Please contact sales representative.
  • ADS/MWO Non-linear models, Reliability data are available for most of our devices. Please contact sales representative.