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Mitsubishi Silicon RF devices support wireless communication networks.
Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
NEW PRODUCTS
Silicon RF High-power MOSFET Module for Commercial Two-way Radio RA50H7687M1
- ■Industry-leading*1 50W power output, expand radio-communication range of professional radio by up to max. 6% versus existing model*2
- ■Industry-leading*1 total efficiency of 40% for reduced power consumption and smaller dimensions
- ■Built-in impedance-matched circuit and conventional package reduce circuit-design load
- ※1As of July 14, 2022 according to Mitsubishi electric research in the power amplifier product of 763MHz to 870MHz band with input power 50mW
- ※2Mitsubishi Electric's existing 45W RF high-power MOSFET module (RA45H7687M1)
3.6V/7.2V/12.5V Operation RF High Power MOS FET (Discrete)
Selection Map
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7.2V/9.6V/12.5V Operation RF High Power MOS FET Module
Selection Map
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Notes
- ■ADS/MWO Non-linear models, Reliability data are available for most of our devices. Please contact sales representative.