(1) Location of the Model

・Please visit the following URL to access the simulator's listing page.
< https://www.mitsubishielectric.com/semiconductors/powerdevices/design_support/simulator/ >

・After filling in the required information and agreeing to the disclaimer, you will be redirected to the download page.

(2) Downloading the Model

・Following table 1 lists the zip files of PLECS models corresponding to the model names of power devices.

・When using the PLECS model, it is necessary to download the PLECS model and the calculation environment corresponding to the model name of the power device being analyzed.

・In this case, we will use the IGBT module "CM450DY-24T" and perform loss calculations and temperature rise calculations assuming a three-phase full-bridge inverter.

・Please download "CM450DY-24T.zip" and "Halfbridge_2level_inverter.zip" and temporarily store them in an appropriate location, such as your desktop.

Table 1. Model Listings (Example)

(1) Storage Location for the Calculation Environment

・Create an appropriate folder and place "Halfbridge_2level_inverter.plecs" from "Halfbridge_2level_ inverter.zip" into it.

・This time, we will create a folder named "Simulation" on the desktop, as shown in Figure 1-1, and move the file there.

Figure 1-1. Model Storage (Example)

・Double-click on "Halfbridge_2level_inverter.plecs" in the "Simulation" folder to open it.

・As shown in Figure 2 below, go to the "File" tab → "PLECS Settings" → "Thermal Settings" in that order, click on "+", select the folder where the PLECS model is stored, "C:\plecs_models", and then click "OK".


(note) This time, the interface is described in Japanese, but you can configure the settings by following the order indicated by the arrows around the area enclosed in red. If the item names or order change due to a version update, please follow those changes.

Figure 2. PLECS Settings (Example)

(1) Selection of IGBT Components

・To select the IGBT "CM450DY-24T_IGBT" for the half-bridge calculation, double-click on the IGBT symbol and select the target model name in the "Thermal Settings" under "Block Parameters." Please refer to Figure 3-1.

・Additionally, for the half-bridge, select both the upper and lower IGBTs in the same manner.

Figure 3-1. Selection of IGBT (Example)

・As shown in Figure 4, go to "Simulation" → "Simulation Parameters" → "Initialization," and set the model initialization commands based on Table 2 below, then click "OK."

Figure 2. PLECS Settings (Example)

Table 2. Meaning of Model Initialization Commands (Example)

・Click "Start" from "Simulation" to execute the simulation.

・The changes in the average junction temperature (Tj) of the IGBT and diode, case temperature (Tc), heat sink temperature (Ts), temperature difference between junction and case (ΔTj-c), and temperature difference between junction and heat sink (ΔTj-s) will be displayed, along with conduction losses, switching losses, and the total losses of the module. Please refer to Figure 5.

Figure 5. Simulation Execution Results

・Click "Analysis Tools" from "Simulation," select "Steady-State Analysis" from the "+" menu, enter the information in "Basic Information," and then click "Start Analysis." Please refer to Figure 7.

・As shown in Figure 7-2, the results of the steady-state analysis can be output.

Figure 7. Simulation Execution Results in Steady-State Analysis (Example)