The rapid spread of mobile terminals such as smartphones and tablets has required the establishment of earth stations for satellite communications systems (SATCOM) which is a means of high-speed communication in regions where it is geographically difficult to install more mobile communication system base stations, or to secure emergency communications and develop terrestrial communication networks.
While power amplifiers using Si transistors have been employed in each of the systems, the switch to GaN amplifiers that employ GaN (Gallium Nitride) on transistors - which is expected to be more efficient and have higher output than Si - is gathering pace.
Our GaN high-frequency devices are contributing to progress in high speed/large capacity communications systems through their high efficiency/high output and extensive product range.
