GaN High-Frequency Devices
- Semiconductors & Devices
- High Frequency Devices
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- GaN High-Frequency Devices
GaN enables high efficiency and high output, thereby contributing to the evolution of high-speed, large-capacity communication systems such as satellite communication (SATCOM) Earth station, and mobile communication base transceiver station (BTS).
Features
High efficiency, high output, abundant product lineup, large capacity for information transmission, miniaturization of communication equipment, low power consumption, etc.
Selection Map
Click the model name for details (You can enlarge it for viewing)
★: New product ★★: Under development
Partially supported by Japan's New Energy and Industrial Technology Development Organization(NEDO).
HEMT：High Electron Mobility Transistor
GaN HEMT for Mobile Communication Base Transceiver Station (BTS)
3.6-4.0GHz, 16W GaN Power Amplifier Module for 5G Massive MIMO Base Stations MGFS52G40MB
- ■Support for 3.6-4.0 GHz band will expand the use of 5G mMIMO base stations in more countries
- ■16W high output power requires fewer PAMs in 5G mMIMO base stations, reducing production costs
- ■41% power-added efficiency in 400 MHz band reduces 5G mMIMO base station power consumption
- ■Modularization simplifies 5G mMIMO base station circuit design and reduces production costs
16W GaN Power Amplifier Module for 5G Massive MIMO Base Stations MGFS52G38MB
- ■Reduces number of power amplifier modules and extends range of 5G mMIMO base stations
- ■High efficiency of 40% (Typ.) in 500MHz band reduces 5G mMIMO base station power consumption
- ■Modularization reduces circuit-design burden and manufacturing cost of 5G mMIMO base stations
8W GaN Power Amplifier Module for 5G Massive MIMO Base Stations
MGFS48G38MB
Features
- ■Higher power-added efficiency of more than 43% in the 400MHz band reduces power consumption of 5G massive MIMO* base stations
- ■Modularization of power amplifiers reduces the circuit design burden and manufacturing cost of 5G massive MIMO base stations
- *MIMO：Multiple Input Multiple Output
Product Lineup
GaN HEMT & MMIC for satellite communication (SATCOM) earth station
Lead to products line-up for various needs of the satellite communication (SATCOM) earth station
GaN MMIC Power Amplifier for Ka-band SATCOM Earth Stations
MGFGC5H3102 / MGFGC5H3103
- ■Expanded GaN HEMT lineup will support proliferation of SNG (satellite news gathering) and SATCOM emergency systems in addition to the usual SATCOM proliferation
- ■Industry's smallest bare chip class* will help downsize SATCOM earth stations
- ■Additional power efficiency of 20% will reduce power consumption in SATCOM earth stations
- *According to Mitsubishi Electric research as of June 14, 2024
Multi-carrier communications Ku-band GaN-HEMTs
Features
- ■New lineup of 70W output power products (MGFK48G2732A) that can operate in the Low-Ku band (13GHz)
- ■Wide offset frequency up to 400MHz
(MGFK48G2732A/MGFK45G3745A/MGFK48G3745A) for large-capacity satellite communications - ■30W/70W/100W of output power products lineup will meet customers diverse needs and available downsizing of SATCOM earth stations
Single-carrier communications Ku-band GaN-HEMTs・MMIC
Features
- ■New lineup of 30W output power products (MGFK45G2732) that can operate in the Low-Ku band (13GHz)
- ■20W/30W/70W/100W of output power products lineup will meet customers diverse needs and available downsizing of SATCOM earth stations
- ■Built-in linearizer (MGFG5H1503) enables low distortion in power transmitters
- *According to Mitsubishi Electric as of September, 2016
Product Lineup
- ■Multi / Single -carrier communications Ku-band GaN-HEMTs
Example of the configuration of the power amplifier by the Ku-band GaN HEMT product line-up
Notes
- ■ADS/MWO Non-linear models, Reliability data are available for most of our devices. Please contact sales representative.
- Semiconductors & Devices
- High Frequency Devices
- Products
- GaN High-Frequency Devices