GaN High Frequency DevicesGaN High Frequency Devices

Outline

The rapid spread of mobile terminals such as smartphones and tablets has required the establishment of earth stations for satellite communications systems (SATCOM) which is a means of high-speed communication in regions where it is geographically difficult to install more mobile communication system base stations, or to secure emergency communications and develop terrestrial communication networks.

While power amplifiers using Si transistors have been employed in each of the systems, the switch to GaN amplifiers that employ GaN (Gallium Nitride) on transistors - which is expected to be more efficient and have higher output than Si - is gathering pace.

Our GaN high-frequency devices are contributing to progress in high speed/large capacity communications systems through their high efficiency/high output and extensive product range.

Features

GaN devices / High efficiency & High output power / Various product lineup


Selection Map

GaN HEMT / High Power GaN HEMT

GaN HEMT / High Power GaN HEMT MGFS37G38L2 MGFK50G3745 MGFK50G3745A★★ MGFK48G3745 MGFK48G3745A MGFK45G3745★ MGFK45G3745A★ MGFG5H1503
  • ★: New products, ★★: Under development
  • These products are based on results obtained from a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO)

3.5GHz GaN HEMT for Mobile Communication Base Transceiver Station (BTS)

Mobile Communication Base Transceiver Station (BTS)

Corresponding of various needs in a micro-cell BTS

Features

Base Transceiver Station (BTS)
  • Achieve high drain efficiency* of 67% by GaN-HEMT and transistor optimization
  • High efficiency allows use of simple cooling system, which contributes to smaller size and lower power consumption of BTS

*According to Mitsubishi Electric as of December, 2015

Products Lineup

Use Frequency Model Output
power
Linear
gain
Drain
efficiency**
Operating
Voltage***
Package
Micro-cell BTS 3.4-3.8GHz MGFS37G38L2Opens in new window 5W 37.0dBm 20dB 67% 50V Plastic molded
package

Measurement result with Doherty power amplifier (5Wx2chip)

Doherty power amplifier
Freq 3.48GHz 3.50GHz 3.52GHz
Psat 33.9dBm 33.9dBm 34.0dBm
Glp 14.3dB 14.1dB 13.5dB
Effd 51.6% 51.3% 52.0%
E-UTRA -50.0dBc -50.0dBc -50.0dBc

GaN HEMT & MMIC for satellite communication (SATCOM) earth station

for satellite communication (SATCOM) earth station

Lead to products line-up for various needs of the satellite communication (SATCOM) earth station

Multi-carrier communications Ku-band GaN-HEMTs

Multi-carrier communications Ku-band GaN-HEMTs
  • Wide offset frequency up to 400MHz (MGFK45G3745A/MGFK48G3745A) for large-capacity satellite communications
  • 30W/70W/100W of output power products lineup will meet customers diverse needs and available downsizing of SATCOM earth stations

Single-carrier communications Ku-band GaN-HEMTs・MMIC

Single-carrier communications Ku-band GaN-HEMTs・MMIC
  • 20W/30W/70W/100W of output power products lineup will meet customers diverse needs and available downsizing of SATCOM earth stations
  • Built-in linearizer (MGFG5H1503) enables low distortion in power transmitters

*According to Mitsubishi Electric as of September, 2016


Products Lineup

  • Multi-carrier communications Ku-band GaN-HEMTs
Frequency Model Output power Linear
gain
Power Added
Efficiency
Offset
frequency
@IMD3=-25dBc
Other
Ku-
band
13.75-14.5
GHz
MGFK50G3745A★★Opens in new window 100W 50.0dBm 10dB 30% ~200MHz IMFET
MGFK48G3745AOpens in new window 70W 48.3dBm 11dB 31% ~400MHz
MGFK45G3745AOpens in new window 30W 45.3dBm 9.5dB 30% ~400MHz
  • Single-carrier communications Ku-band GaN-HEMTs・MMIC
Frequency Model Output power Linear
gain
Power Added
Efficiency
Offset
frequency
@IMD3=-25dBc
Other
Ku-
band
13.75-14.5
GHz
MGFK50G3745Opens in new window 100W 50.0dBm 10dB 30% ~5MHz IMFET
MGFK48G3745Opens in new window 70W 48.3dBm 12dB 33% ~5MHz
MGFK45G3745Opens in new window 30W 45.3dBm 9.5dB 31% ~5MHz
MGFG5H1503Opens in new window 20W 43.0dBm 24dB 20% ~5MHz MMIC
  • ★: New products, ★★: Under development
  • These products are based on results obtained from a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO)

Example of the configuration of the power amplifier by the Ku-band GaN HEMT product line-up

Output
power
Multi-carrier communications Single-carrier communications
30W
70W

* MGF5H1503 also usable

100W
120W

Notes

  • If you look for lower operating voltage devices, Please visit our GaAs devices page.
  • ADS/MWO Non-linear models, Reliability data are available for most of our devices. Please contact sales representative.

Data Sheets

View data sheets for GaN High Frequency Devices