Power supply systems for air conditioners, PV(Photovoltaic) power system, xEV charging infrastructure, on-board charger
SiC-MOSFET
SIC-MOSFET appropriated by application
| Application | Rating | Package | Model | Design Support |
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|---|---|---|---|---|---|---|
| VDS | RDS(on) | ID | ||||
| Home appliances / Industrial Equipment |
1200V | 80mΩ | 36A | TO-247-4 | BM080N120K*1 |  Data Sheet(PDF: 577KB) |
| SPICE Model (LTspice) |
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| 40mΩ | 66A | TO-247-4 | BM040N120K*1 | Data Sheet (PDF: 589KB) |
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| SPICE Model (LTspice) |
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| 22mΩ | 107A | TO-247-4 | BM022N120K*1 | Data Sheet (PDF: 569KB) |
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| SPICE Model (LTspice) |
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| Automotive | 1200V | 80mΩ | 36A | TO-247-4 | BM080N120KJ*1 | Data Sheet (PDF: 577KB) |
| SPICE Model (LTspice) |
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| 40mΩ | 66A | TO-247-4 | BM040N120KJ*1 | Data Sheet (PDF: 589KB) |
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| SPICE Model (LTspice) |
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| 22mΩ | 107A | TO-247-4 | BM022N120KJ*1 | Data Sheet (PDF: 569KB) |
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| SPICE Model (LTspice) |
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*1: Discontinuation of development
- *Please be sure to read the disclaimer in the download file before using the contents.
LTspice is a registered trademark of Analog Devices, Inc.
SiC with superior characteristics
Power loss reduced
SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.
High-temperature operation
When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.
High-speed switching operation
With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.
Heat dissipation
SiC has three times the heat conductivity of silicon, which improves heat dissipation.
Main Applications
Features
- Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving power loss reduction by approx. 80%* compared to the conventional silicon (Si) products.
- The SiC-MOSFET allows high frequency switching and contributes to downsizing the reactor, heat sink and other peripheral components
- *Conventional silicon (Si) product: Mitsubishi Electric 1200V IGBT module
Inner circuit
Power loss comparison
Data Sheets
View data sheets for SiC-MOSFET
