SiC-MOSFET

SIC-MOSFET appropriated by application

Application	Rating			Package	Model	Design Support
Application	V_DS	R_DS(on)	I_D	Package	Model	Design Support
Home appliances / Industrial Equipment	1200V	80mΩ	36A	TO-247-4	BM080N120K^★★	Data Sheet
		80mΩ	36A	TO-247-4	BM080N120K^★★	SPICE Model (LTspice)
		40mΩ	66A	TO-247-4	BM040N120K^★★	Data Sheet
		40mΩ	66A	TO-247-4	BM040N120K^★★	SPICE Model (LTspice)
		22mΩ	107A	TO-247-4	BM022N120K^★★	Data Sheet
		22mΩ	107A	TO-247-4	BM022N120K^★★	SPICE Model (LTspice)
Automotive	1200V	80mΩ	36A	TO-247-4	BM080N120KJ^★★	Data Sheet
		80mΩ	36A	TO-247-4	BM080N120KJ^★★	SPICE Model (LTspice)
		40mΩ	66A	TO-247-4	BM040N120KJ^★★	Data Sheet
		40mΩ	66A	TO-247-4	BM040N120KJ^★★	SPICE Model (LTspice)
		22mΩ	107A	TO-247-4	BM022N120KJ^★★	Data Sheet
		22mΩ	107A	TO-247-4	BM022N120KJ^★★	SPICE Model (LTspice)

★★: Under Development

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LTspice is a registered trademark of Analog Devices, Inc.

SiC with superior characteristics

Power loss reduced

SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.

SiC with superior characteristics

High-temperature operation

When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

SiC with superior characteristics

High-speed switching operation

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

SiC with superior characteristics

Heat dissipation

SiC has three times the heat conductivity of silicon, which improves heat dissipation.

Power supply systems for air conditioners, PV(Photovoltaic) power system, xEV charging infrastructure, on-board charger

Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving power loss reduction by approx. 80%^* compared to the conventional silicon (Si) products.
The SiC-MOSFET allows high frequency switching and contributes to downsizing the reactor, heat sink and other peripheral components