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Semiconductors & Devices

SiC Power ModulesSiC Power Modules

SiC power modules appropriated by application

Application Product name Model Rating Connection
Voltages[V] Current[A]
Industrial
equipment
SiC-MOSFET Built-in
Hybrid SiC Power Modules
FMH600STX-24B 1200 600 3Level T-type
FMH600FX-24B Vienna rectifier
Full SiC Power Modules FMF300BXZ-24B 1200 300 4in1
FMF400BX-24B 400 4in1
FMF400BXZ-24B 400 4in1
FMF600DXZ-24B 600 2in1
FMF800DX-24B 800 2in1
FMF800DXZ-24B 800 2in1
FMF1200DXZ-24B 1200 2in1
FMF300DXZ-34B 1700 300 2in1
FMF300E3XZ-34B 300 2in1(Chopper)
Full SiC-IPM PMF75CGA120 1200 75 6in1
PMF75CGAL120
Hybrid SiC Power Modules
for High-frequency Switching
Applications
CMH100DY-24NFHOpens in new window 1200 100 2in1
CMH150DY-24NFHOpens in new window 150
CMH200DU-24NFHOpens in new window 200
CMH300DU-24NFHOpens in new window 300
CMH300DX-24NFHOpens in new window
CMH400DU-24NFHOpens in new window 400
CMH600DU-24NFHOpens in new window 600
CMH400HC6-24NFMOpens in new window 400 1in1
Traction Full SiC Power Modules FMF375DC-66A 3300 375 2in1
FMF750DC-66A 750
Hybrid SiC Power Modules CMH1200DC-34S 1700 1200
CMH600DC-66X 3300 600
Home
appliances
Super mini Full SiC DIPIPM PSF15S92F6 600 15 6in1
PSF25S92F6 25
Super mini Hybrid SiC DIPPFC PSH30L92C6-W 600 30Arms Three-phase interleaved
PSH20L91A6-A 20Arms Two-phase interleaved
Super mini Full SiC DIPPFC PSF20L91A6-A

SiC with superior characteristics

SiC with superior characteristics

Power loss reduced

SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.

SiC with superior characteristics

High-temperature operation

When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

SiC with superior characteristics

High-speed switching operation

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

SiC with superior characteristics

Heat dissipation

SiC has three times the heat conductivity of silicon, which improves heat dissipation.

Featured Products
15A/25A Super mini Full SiC DIPIPM for Home Appliances

  • SiC-MOSFET achieves reduction in ON resistance, power loss reduced approx. 70% compared to conventional product*
  • Construct low-noise system by reducing recovery current
  • Numerous built-in functions: Bootstrap diode for power supply to drive P-side, temperature information output, etc.
  • Unnecessary minus-bias gate drive circuit using original high Vth SiC-MOSFET technology
  • As package and pin layout compatibility with conventional products* is ensured, simply replace with this product to improve performance
  • *
    : Conventional product: Mitsubishi Electric Super mini DIPIPM Series

Internal block diagramApprox

Internal block diagramApprox

Power loss comparison

Power loss comparison

Featured Products
Super mini Hybrid / Full SiC DIPPFC for Home Appliances

  • Incorporating SiC chip in the Super mini package widely used in home appliances
  • The SiC chip allows high-frequency switching (up to 40kHz) and contributes to downsizing the reactor, heat sink and other peripheral components
  • Adopts the same package as the Super mini DIPIPM to eliminate the need for a spacer between the inverter and heat sink, and to facilitate its implementation

Product lineup

Model Circuit configuration Chips
PSH20L91A6-A 2phase Interleaved Hybrid SiC
PSF20L91A6-A Full SiC
PSH30L92C6-W 3phase Interleaved Hybrid SiC

Internal block diagram (PSF20L91A6-A)

Internal block diagram (PSF20L91A6-A)

Power loss comparison

Power loss comparison

New Products
1200V/600A SiC MOSFET Built-in Hybrid SiC Power Modules
for Industrial Equipment

  • SiC-MOSFET built-in hybrid power module
  • Contributes to improvement of power loss and downsizing of equipment by optimized to IGBT and Diode for 3Level T type and Vienna rectifier
  • Reduction surge voltage by Low-inductance package

Product lineup

Model Rated
voltage
Rated
current
Circuit
configulation
Package size
(D x W)
FMH600STX-24B★★ 1200V 600A 3Level T-type 152mm×121.7mm
FMH600FX-24B★★ Vienna rectifier
  • ★★
    : Under Development

Internal circuit diagram

Internal circuit diagram

Featured Products
Full SiC Power Modules for Industrial Equipment

  • Power loss reduced approx. 70% compared to the conventional product*
  • Low-inductance package adopted to deliver full SiC performance
  • Contributes to increasing the output current and downsizing peripheral components by low power loss characteristics of SiC
  • *
    : Comparison with the same rated value of the conventional 7th Gen. IGBT modules

Product lineup

Model Rated
voltage
Rated
current
Circuit
configulation
Package size
(D x W)
FMF400BX-24B★★ 1200V 400A 4 in 1 92.3×121.7mm
FMF800DX-24B★★ 800A 2 in 1
  • ★★
    : Under Development

Power loss comparison

Power loss comparison

New Products
Full SiC Power Modules for Industrial Equipment
(built-in short-circuit protection function)

  • By using short circuit monitoring circuit in the module it is possible to transfer a short circuit detection signal to the system side
  • Power loss reduced approx.70% compared to the conventional product*
  • Low- inductance package adopted to deliver full SiC performance
  • *
    : Comparison with the same rated value of the conventional 7th Gen. IGBT modules

Product lineup

Model Rated
voltage
Rated
current
Circuit
configulation
Package size
(D x W)
FMF300BXZ-24B★★ 1200V 300A 4 in 1 79.6mm×122mm
FMF400BXZ-24B★★ 400A 4 in 1
FMF600DXZ-24B★★ 600A 2 in 1
FMF800DXZ-24B★★ 800A 2 in 1
FMF1200DXZ-24B★★ 1200A 2 in 1 152mm×122mm
FMF300DXZ-34B★★ 1700V 300A 2 in 1 79.6mm×122mm
FMF300E3XZ-34B★★ 300A 2 in 1(Chopper)
  • ★★
    : Under development

Protection circuit diagram

Protection circuit diagram

Power loss comparison

Power loss comparison

New Products
1200V/75A Full SiC-IPM for Industrial Equipment

  • Realized high performance and low power loss by 2nd. generation SiC-MOSFET and SiC-SBD with current sense and temperature sense
  • External size is reduced approx.30% with the conventional Silicon IPM products* of the same rating.
  • Available to drive it by the equivalent I/F and power supply circuit with the Silicon IPM products.
  • *
    : Conventional product: Mitsubishi Electric G1 Series PM75CG1B120

Internal circuit diagram

Internal circuit diagram

Power loss comparison

Power loss comparison

Featured Products
Hybrid SiC Power Modules for High-frequency Switching Applications

  • Power loss reduction of approx. 40% contributes to higher efficiency, smaller size and weight reduction of total system
  • Suppresses surge voltage by reducing internal inductance
  • Package compatible with the conventional product*
  • *
    : Conventional product : Mitsubishi Electric NFH Series IGBT Modules

Product lineup

Applications Model Rated voltage Rated current Circuit configuration External size
( D x W )
Industrial
equipment
CMH100DY-24NFHOpens in new window 1200V 100A 2-in-1 48×94mm
CMH150DY-24NFHOpens in new window 150A 48×94mm
CMH200DU-24NFHOpens in new window 200A 62×108mm
CMH300DU-24NFHOpens in new window 300A 62×108mm
CMH300DX-24NFHOpens in new window 62.5x152mm
CMH400DU-24NFHOpens in new window 400A 80×110mm
CMH400HC6-24NFMOpens in new window 400A 1-in-1 62×108mm
CMH600DU-24NFHOpens in new window 600A 2-in-1 80×110mm

Recovery waveform (FWD)

Recovery waveform (FWD)

Power loss comparison

Power loss comparison

New Products
3300V Hybrid / Full SiC Power Modules for Traction Inverters and HVDC system

  • Suitable chip set combination for high speed switching
  • Reducesd power loss compared to the conventional products*
  • Low inductance pakcage maximize SiC perfomance
  • *
    : Si product: Mitsubishi Electric HVIGBT, CM600DC-66X

Product lineup

  Model Rated
voltage
Rated
current
Circuit
configulation
Package size
(D x W)
Hybrid SiC CMH600DC-66X 3300V 600A 2 in 1 100×140mm
Full SiC FMF375DC-66A 375A
FMF750DC-66A 750A

Internal circuit diagram

Internal circuit diagram
  • *
    ex) Full SiC

Power loss comparison

Power loss comparison
  • *
    ex) Full SiC

Featured Products
1700V/1200A Hybrid SiC Power Modules for Traction Inverters

  • Power loss reduced approximately 30% compared to the conventional product*
  • Highly reliable design appropriate for use in traction
  • Package compatible with the conventional product*
  • *
    : Conventional product : Mitsubishi Electric Power Module CM1200DC-34N

Main specifications

Module Max.operating temperature 150℃
Isolation voltage 4000Vrms
Si-IGBT
@150℃
Collector-emitter saturation voltage 2.3V
Switching loss
850V/1200A
turn-on 160mJ
turn-off 400mJ
SiC-SBD
@150℃
Emitter-collector voltage 2.3V
Capacitive charge 9.0µC

Internal circuit diagram

Internal circuit diagram

Power loss comparison

Power loss comparison

Development of Mitsubishi Electric SiC Power Devices
and Power Electronics Equipment Incorporating Them

Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics,
we succeeded in developing various elemental technologies.
In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device.
Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery.
We will continue to provide competitive SiC power modules with advanced development and achievements from now on.

Development of Mitsubishi Electric SiC Power Devices and Power Electronics Equipment Incorporating Them

  • *1 Researched on press releases by Mitsubishi Electric.  *2 Currently under development, as of May 2015.
  • *
    The year and month listed are based on press releases or information released during the product launch month in Japan.
  • Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO).

R&D SiC Power Devices

Data Sheets

View data sheets for SiC Power Modules