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Semiconductors & Devices


SiC-SBD appropriated by application

Application Model Rated Voltage Rated Current Package Design support
BD20060T 600V 20A TO-220FP-2 Data Sheet*
SPICE Model*
BD20060A TO-263-2 Data Sheet*
SPICE Model*

*: Coming Soon

SiC with superior characteristics

High reliability thanks to JBS structure

High reliability thanks to JBS structure

JBS structure combining pn junction and schottky junction helps to achieve high surge immunity.SBD with low loss and high reliability will contribute to lower power consumption and downsizing of the power supply system.

JBS : Junction Barrier Shottky

SiC with superior characteristics

High-temperature operation

When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

SiC with superior characteristics

High-speed switching operation

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

SiC with superior characteristics

Heat dissipation

SiC has three times the heat conductivity of silicon, which improves heat dissipation.

Main Applications

Power supply systems for air conditioners, PV(Photovoltaic) power system, xEV charging infrastructure


  • Power loss is reduced by approx. 21% compared to silicon (Si) products, contributing to energy conversion
  • The SiC-SBD allows high frequency switching and contributes to downsizing the reactor, heat sink and other peripheral components
  • JBS structure allows high forward surge capability and contributes to improving reliability

Inner circuit

Inner circuit

Power loss comparison*

Power loss comparison
  • *
    Conventional Si (Silicon) product: Si diode which is equipped with Mitsubishi Electric DIPPFC™