SiC-SBD

SiC-SBD appropriated by application

Application	Model	Rated Voltage	Rated Current	Package	Design support
Home appliances / Industrial equipment	BD20060T	600V	20A	TO-220FP-2	Data Sheet^*
	BD20060T			TO-220FP-2	SPICE Model^*
	BD20060S^★★			TO-247-3	Data Sheet^*
	BD20060S^★★			TO-247-3	SPICE Model^*
	BD20060A^★★			TO-263S-3	Data Sheet^*
	BD20060A^★★			TO-263S-3	SPICE Model^*
	BD20120S^★★	1200V		TO-247-3	Data Sheet^*
	BD20120S^★★			TO-247-3	SPICE Model^*
	BD20120P^★★			TO-247-2	Data Sheet^*
	BD20120P^★★			TO-247-2	SPICE Model^*
Automotive	BD20120SJ^★★			TO-247-3	Data Sheet^*
Automotive	BD20120SJ^★★			TO-247-3	SPICE Model^*

★★: Under Development *: Coming Soon

SiC with superior characteristics

High reliability thanks to JBS structure

JBS structure combining pn junction and schottky junction helps to achieve high surge immunity.SBD with low loss and high reliability will contribute to lower power consumption and downsizing of the power supply system.

JBS : Junction Barrier Shottky

SiC with superior characteristics

High-temperature operation

When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

SiC with superior characteristics

High-speed switching operation

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

SiC with superior characteristics

Heat dissipation

SiC has three times the heat conductivity of silicon, which improves heat dissipation.

Power supply systems for air conditioners, PV(Photovoltaic) power system, xEV charging infrastructure, on-board charger

Power loss is reduced by approx. 21% compared to silicon (Si) products, contributing to energy conversion
The SiC-SBD allows high frequency switching and contributes to downsizing the reactor, heat sink and other peripheral components
JBS structure allows high forward surge capability and contributes to improving reliability