SiC-SBD

High reliability thanks to JBS structure

JBS structure combining pn junction and schottky junction helps to achieve high surge immunity.SBD with low loss and high reliability will contribute to lower power consumption and downsizing of the power supply system.

JBS : Junction Barrier Shottky

High-temperature operation

When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

High-speed switching operation

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

Heat dissipation

SiC has three times the heat conductivity of silicon, which improves heat dissipation.