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Semiconductors & Devices

Power Modules for Power Applications : SiC ApplicationPower Modules for Power Applications : SiC Application


SiC power modules appropriated by application

Application Product name Model Rating Connection
Voltages[V] Current[A]
Industrial
equipment
Hybrid SiC-IPM PMH75CL1A120 1200 75 6-in-1
Full SiC-IPM PMF75CL1A120
Full SiC Power Modules FMF400BX-24A 1200 400 4-in-1
FMF800DX-24A 800 2-in-1
FMF600DX2-24A 600
FMF800DX2-24A 800
Hybrid SiC Power Modules for
High-frequency Switching
Applications
CMH100DY-24NFH 1200 100 2-in-1
CMH150DY-24NFH 150
CMH200DU-24NFH 200
CMH300DU-24NFH 300
CMH300DX-24NFH
CMH400DU-24NFH 400
CMH400HC6-24NFM 1-in-1
CMH600DU-24NFH 600 2-in-1
Large Hybrid SiC DIPIPM for PV Application PSH50YA2A6 600 50 4-in-1
Traction Hybrid SiC Power Modules CMH1200DC-34S 1700 1200 2-in-1
Home
appliances
Super mini Full SiC DIPIPM PSF15S92F6 600 15 6-in-1
PSF25S92F6 25
Super mini Hybrid SiC DIPPFC PSH20L91A6-A 20Arms Boost chopper×2
Super mini Full SiC DIPPFC PSF20L91A6-A

SiC with superior characteristics

SiC with superior characteristics

Power loss reduced

SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.

SiC with superior characteristics

High-temperature operation

When the temperature increases, electrons are exited to the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

SiC with superior characteristics

High-speed switching operation

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

SiC with superior characteristics

Heat dissipation

SiC has three times the heat conductivity of silicon, which improves heat dissipation.


Featured Products
15A/25A Super mini Full SiC DIPIPM for Home Appliances

  • SiC-MOSFET achieves reduction in ON resistance, power loss reduced approx. 70% compared to conventional product*
  • Construct low-noise system by reducing recovery current
  • Numerous built-in functions: Bootstrap diode for power supply to drive P-side, temperature information output, etc.
  • Unnecessary minus-bias gate drive circuit using original high Vth SiC-MOSFET technology
  • As package and pin layout compatibility with conventional products* is ensured, simply replace with this product to improve performance
  • *
    : Conventional product: Mitsubishi Electric Super mini DIPIPM Series

Internal block diagramApprox

Internal block diagramApprox

Power loss comparison

Power loss comparison

Featured Products
600V/50A Large Hybrid SiC DIPIPM for PV Applications

  • Hybrid structure achieved with SiC Schottky barrier diode and 7th-generation IGBT chips
  • Power loss reduction of approx. 25% compared to the conventional product*
  • Helps downsize PV inverter system thanks to modified short-circuit protection scheme
  • *
    Conventional product : Mitsubishi Electric Large DIPIPM PS61A99

Internal circuit diagram

Internal circuit diagram

Power loss comparison

Power loss comparison

Featured Products
Super mini Hybrid / Full SiC DIPPFC for Home Appliances

  • Incorporating SiC MOSFET in the Super mini package widely used in home appliances
  • The SiC MOSFET allows high-frequency switching (up to 40kHz) and contributes to downsizing the reactor, heat sink and other peripheral components
  • Corresponding to interleaved PFC operation by embedded two chopper circuits
  • Adopts the same package as the Super mini DIPIPM to eliminate the need for a spacer between the inverter and heat sink, and to facilitate its implementation

Internal block diagram (Full SiC DIPPFC)

Internal block diagram (Full SiC DIPPFC)

Power loss comparison

Power loss comparison

Featured Products
1200V/75A Hybrid/Full SiC-IPM for Industrial Equipment

  • Incorporates SiC-MOSFET with current sensor and built-in drive circuit and protection functions to deliver high functionality
  • Significant reduction in power loss compared to the conventional product*
  • Package compatible with the conventional product*
  • *
    : Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120

Main specifications

Rating 1200V/75A 6in1
Mounted
Functions
  • Built-in drive circuit
  • Under-voltage protection
  • Short-circuit protection
  • Over-temperature protection
    (Monitoring IGBT chip surface)

Internal circuit diagram

Internal circuit diagram

Power loss comparison

Power loss comparison

Featured Products
1200V/400A・1200V/800A Full SiC Power Modules for Industrial Equipment

  • Power loss reduced approx. 70% compared to the conventional product*
  • Low-inductance package adopted to deliver full SiC performance
  • Contributes to realizing smaller/lighter inverter equipment by significantly reducing the package size and realizing a mounting area approx. 60% smaller compared to the conventional product*
  • *
    : Conventional product : Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs

Product lineup

Applications Rated voltage Reted current Circuit configration Package size (D×W)
Industrial equipment 1200V 400A 4-in-1 92.3×121.7mm
800A 2-in-1

Comparison with conventional product package

Comparison with conventional product package

Power loss comparison

Power loss comparison

New Products
1200V/600A・1200V/800A Fill SiC Power Modulesfor Industrial Equipment

  • By using short circuit monitoring circuit in the module it is possible to transfer a short circuit detection signal to the system side
  • Power loss reduced approx.70% compared to the conventional product*
  • Low- inductance package adopted to deliver full SiC performance
  • *
    : Conventional product : Mitsubishi Electric CM400DY-24NF (1200V/400A 2in1) 2pcs

Product lineup

Model Rated voltage Reted current External size (D x W)
FMF600DX2-24A★★ 1200V 600A 79.6×122mm
FMF800DX2-24A★★ 800A
  • ★★
    : Under development

Protection circuit diagram

Protection circuit diagram

Power loss comparison

Power loss comparison

Featured Products
Hybrid SiC Power Modules for High-frequency Switching Applications

  • Power loss reduction of approx. 40% contributes to higher efficiency, smaller size and weight reduction of total system
  • Suppresses surge voltage by reducing internal inductance
  • Package compatible with the conventional product*
  • *
    : Conventional product : Mitsubishi Electric NFH Series IGBT Modules

Product lineup

Applications Model Rated voltage Rated current Circuit configuration External size
( D x W )
Industrial
equipment
CMH100DY-24NFH 1200V 100A 2-in-1 48×94mm
CMH150DY-24NFH 150A 48×94mm
CMH200DU-24NFH 200A 62×108mm
CMH300DU-24NFH 300A 62×108mm
CMH300DX-24NFH 63×152mm
CMH400DU-24NFH 400A 80×110mm
CMH400HC6-24NFM 400A 1-in-1 62×108mm
CMH600DU-24NFH 600A 2-in-1 80×110mm

Recovery waveform (FWD)

Recovery waveform (FWD)

Power loss comparison

Power loss comparison

Featured Products
1700V/1200A Hybrid SiC Power Modules for Traction Inverters

  • Power loss reduced approximately 30% compared to the conventional product*
  • Highly reliable design appropriate for use in traction
  • Package compatible with the conventional product*
  • *
    : Conventional product : Mitsubishi Electric Power Module CM1200DC-34N

Main specifications

Module Max.operating temperature 150℃
Isolation voltage 4000Vrms
Si-IGBT
@150℃
Collector-emitter saturation voltage 2.3V
Switching loss
850V/1200V
turn-on 140mJ
turn-off 390mJ
SiC-SBD
@150℃
Emitter-collector voltage 2.3V
Capacitive charge 9.0µC

Internal circuit diagram

Internal circuit diagram

Power loss comparison

Power loss comparison

Development of Mitsubishi Electric SiC Power Devices
and Power Electronics Equipment Incorporating Them

Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics,
we succeeded in developing various elemental technologies.
In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device.
Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery.
We will continue to provide competitive SiC power modules with advanced development and achievements from now on.

Development of Mitsubishi Electric SiC Power Devices and Power Electronics Equipment Incorporating Them

  • *1 Researched on press releases by Mitsubishi Electric.  *2 Currently under development, as of May 2015.
  • *
    The year and month listed are based on press releases or information released during the product launch month in Japan.
  • Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO).

R&D SiC Power Devices

Data Sheets

View data sheets for SiC Power Modules

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