CH0560C-0750AA / WF0560C-0750AA
750V, 560A, RC-IGBT Bare Die
Status: Under development (Samples available)
3rd-Gen. RC-IGBT* technology and optimal structural design realize low-loss, high-reliability devices.
*RC-IGBT : Reverse Conducting Insulated Gate Bipolar Transistor
Features
- By forming the IGBT and FWD on a single chip, the chip mounting area is significantly reduced compared to conventional cases where the IGBT and FWD are arranged separately, contributing to system miniaturization.
- The third-generation RC-IGBT uses an anode-cathode structure that suppresses carrier injection efficiency, reducing the recovery loss of the FWD.
- Equipped with on-chip temperature sensing diode and on-chip current sensing
Applications
- EV・HEV
- On-board charger
- Charging infrastructure
Main Specifications
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Device | RC-IGBT Bare Die | ||
| VCES | Max. | 750 | V |
| IC | Max. | 560 | A |
| Supply situation | Under development | ||
| Main Applications | Automotive |
Packing information
CH560C-0750AA : Chip tray
WF560C-0750AA : Sawn on film
Please contact us for samples, data sheets and application notes.
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