MITSUBISHI ELECTRIC Power Devices: WF0009Q-1200AA

Power Devices > Product Information > Bare Die > SiC MOSFET > WF0009Q-1200AA

WF0009Q-1200AA / CH0009Q-1200AA

1200V, 8.9mΩ, SiC MOSFET Bare Die

Status: Under development (Samples available)

Trench SiC-MOSFET process technology and optimal structural design realize low-loss, high-reliability devices.

Features

Applying high-quality process technology cultivated in Si power devices to SiC-MOSFET
In addition to the Bottom P-Well structure that protects the gate oxide film, Mitsubishi original structure (SPW^*1, J-FET doping^*2) realizes high gate reliability, low Ron, and low switching loss.
Low on-resistance characteristics and high reliability achieved through optimal structural design and high-quality process technology
Surface electrodes are compatible with solder joints

*1：Side P-Well
*2：Technology to increase the impurity concentration in the JFET (Junction Field Effect Transistor) region and increase the density of the device.

Applications