WF0030P-1200xx
1200V, 30mΩ, SiC MOSFET Bare Die
Status: Preparing for mass production (Samples available)
Note: The 'xx' at the end of the type name is tentative.
Trench SiC-MOSFET process technology and optimal structural design realize low-loss, high-reliability devices.
Features
- Applying high-quality process technology cultivated in Si power devices to SiC-MOSFET
- Low on-resistance characteristics and high reliability achieved through optimal structural design and high-quality process technology
Applications
- EV / HEV
- On-board charger
- Charging infrastructure
- DC/DC converter
Main Specifications
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Device | SiC MOSFET Bare Die | ||
| VDSS | Max. | 1200 | V |
| RDS(ON) | Typ. | 30* | mΩ |
| Supply situation | Preparing for mass production | ||
| Main Applications | Automotive / Industrial |
Packing information
WF0030P-1200xx : Sawn on film
Please contact us for samples, data sheets and application notes.
Enquiries Related to Products
Documents
-
-
Nov 12, 2024 Mitsubishi Electric to Ship Samples of SiC-MOSFET Bare Die for xEVs
-
Oct 10, 2023 Mitsubishi Electric to Invest in Coherent's New SiC Business
-
May 26, 2023 Mitsubishi Electric and Coherent Enter into A Collaboration to Scale Manufacturing of SiC Power Electronics on A 200 mm Technology Platform
-
Mar 14, 2023 Mitsubishi Electric to Construct New Wafer Plant to Boost SiC Power Semiconductor Business
-
Nov 12, 2024 Mitsubishi Electric to Ship Samples of SiC-MOSFET Bare Die for xEVs
Links to associated page
SiC Power Devices
Introducing Mitsubishi Electric's SiC power devices.
FAQ