T series equipped with seventh generation IGBT
M series equipped with eighth generation IGBT
Insulated gate bipolar transistor (IGBT) modules, which are indispensable devices for inverters in all kinds of industrial equipment, have been improved with higher current and higher withstand voltage since their commercialization in 1990. In addition, Mitsubishi Electric has responded to the need for lower loss and downsizing of industrial equipment by moving from a flat planar chip structure to a trench gate structure, and by using CSTBT™ (Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative effect). The T/T1 series is smaller and has lower power dissipation than the conventional S series (6th generation IGBTs). Furthermore, the NX and LV100 types have been added to the standard (std) type of conventional external shape.The M series further reduces power losses compared to the conventional T/T1 series (7th generation IGBTs).
Features
- Equipped with a 7th generation IGBT adopting a CSTBT™*1 configuration and a diode adopting an RFC *2 configuration, this product reduces power loss and contributes to lower power consumption of industrial equipment
- A new structure reduces the soldered portion and improves thermal cycle life to contribute to higher reliability of industrial equipment
- Standard package supports multiple sources
- Greater user friendliness through adoption of a low inductance package
- Optimal for 1-5 kHz applications through low switching loss
- Isolation voltage 4kV
- The 8th generation IGBT features an SDA※3 gate structure, along with a thinner chip and a CPL※4 structure, enabling high current capacity and low power loss.
- The 8th generation IGBT reduces reverse recovery dv/dt and turn-on switching losses (Eon)
- ※1：Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative effect
- ※2：Relaxed Field of cathode
- ※3：Split Dummy Active
- ※4：Controlling carrier Plasma Layer
Applications
- Motion control
- Renewable energy
- Power supply, Uninterruptable power supply (UPS)
- Energy storage PCS
8th generation IGBT structure
Switching characteristics
Low inductance structure
Lineup
| IC (A) | Connection | VCES=1200V | VCES=1700V | VCES=2000V | |||
|---|---|---|---|---|---|---|---|
| Type name | DataSheet | Type name | DataSheet | Type name | DataSheet | ||
| 800 | - | - | |||||
| 1200 | |||||||
| 1800 | - | - | - | - | |||
| Package |  | ||||||
Documents
Corresponding Products
IGBT modules std type
A lineup comprising three package types with 2in1 circuit configurations.
IGBT modules NX type
We offer a broad circuit configuration lineup, including 2in1, 6in1, 7in1, and CIB. The press-fit pin package is also available.
Links to associated page
Power loss simulator
Simplified simulator to calculate power module losses and temperature rise.
FAQ