Power Device > Product Information > IPM/DIPIPM > Full SiC SLIMDIP/Hybrid SiC SLIMDIP
Full SiC SLIMDIP/Hybrid SiC SLIMDIP

Added SiC-equipped products to the SLIMDIP lineup

The first SiC versions in SLIMDIP achieves excellent output and power loss reduction for energy savings in small- to large-capacity appliances.

  • ##@.FIGURE_04_TTL_VEW##
  • ##@.FIGURE_05_TTL_VEW##
  • ##@.FIGURE_06_TTL_VEW##
  • ##@.FIGURE_04_01_TTL_VEW##
  • ##@.FIGURE_05_01_TTL_VEW##
  • ##@.FIGURE_06_01_TTL_VEW##
##@.FIGURE_04_TTL_VEW##
##@.FIGURE_05_TTL_VEW##
##@.FIGURE_06_TTL_VEW##
##@.FIGURE_04_01_TTL_VEW##
##@.FIGURE_05_01_TTL_VEW##
##@.FIGURE_06_01_TTL_VEW##
Previous Next

Features

  • The first SiC versions in SLIMDIP series of compact, terminal-optimized modules.
  • Reducing package size 30% compared to Super mini DIPIPM.
  • The terminal layout and protection functions are equivalent to the conventional SLIMDIP series.
  • Full SiC SLIMDIP significantly reduces power loss compared to Si-based products for more energy-efficient appliances.
  • Integration of both SiC-MOSFET and RC-IGBT※1 into SLIMDIP enables Hybrid SiC SLIMDIP to reduce power loss compared to the current Si-based products.
  • ※1：Reverse Conducting IGBT
DIPIPM, SLIMDIP, DIPIPM+, SOPIPM, DIPPFC and CSTBT are trademarks of MITSUBISHI ELECTRIC CORPORATION.

Applications

  • Air-conditioner
  • Clothes Washer and Dryer
  • Fan and Brower
  • Small capacity inverter
  • Small capacity servo
  • Pump

Lineup

VCES / VDSS = 600V
ConfigurationIC/ID [A]Type nameDataSheet
Full SiC SLIMDIP15
Hybrid SiC SLIMDIP15

Featured Products

Built-in power chips

The Full-SiC SLIMDIP adopts an all-SiC configuration, while the Hybrid-SiC SLIMDIP adopts a parallel configuration using an SiC MOSFET and an RC-IGBT.
  • ##@.TEXT_22_01_VEW##

    SLIMDIP (e.g. SLIMDIP-L)

  • ##@.TEXT_22_02_VEW##

    Hybrid SiC SLIMDIP

  • ##@.TEXT_22_03_VEW##

    Full SiC SLIMDIP

Loss reduction by SiC SLIMDIP (ratio comparison to Si-based products)

By incorporating SiC MOSFET, significant loss reduction has been achieved compared to conventional products equipped with Si chip.
  • ##@.TEXT_23_01_VEW##

    Io = 1.5Arms

  • ##@.TEXT_23_02_VEW##

    Io = 4Arms

Simulation conditions：three-phase modulation, VCC/VDD = 300V, fC = 5kHz, fO = 60Hz, P.F.=0.8, Modulation=1, Tj=125℃ data

Application notes

Corresponding Products

Full SiC Super Mini DIPIPM

VDSS = 600V
ID = 15A～25A

SLIMDIP

VCES = 600V
IC = 5A～30A

Links to associated page

Power loss simulator

Simplified simulator to calculate power module losses and temperature rise.

FAQ

Answers to frequently asked questions.

Evaluation boards

Supports development of inverter equipment utilizing DIPIPM.